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Results: 1-13 |
Results: 13
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
Authors: Eliseev, PG Li, H Liu, GT Stintz, A Newell, TC Lester, LF Malloy, KJ
Citation: Pg. Eliseev et al., Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers, IEEE S T QU, 7(2), 2001, pp. 135-142
Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation
Authors: Osinski, M Smagley, VA Smolyakov, GA Eliseev, PG
Citation: M. Osinski et al., Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation, IEEE S T QU, 7(2), 2001, pp. 270-279
Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence
Authors: Juodkazis, S Eliseev, PG Watanabe, M Sun, HB Matsuo, S Sugahara, T Sakai, S Misawa, H
Citation: S. Juodkazis et al., Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence, JPN J A P 1, 39(2A), 2000, pp. 393-396
Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model
Authors: Eliseev, PG Li, H Liu, GT Stintz, A Newell, TC Lester, LE Malloy, KJ
Citation: Pg. Eliseev et al., Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model, QUANTUM EL, 30(8), 2000, pp. 664-668
Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots
Authors: Eliseev, PG
Citation: Pg. Eliseev, Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots, QUANTUM EL, 30(2), 2000, pp. 152-157
Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire
Authors: Eliseev, PG Osinski, M Lee, JY Sugahara, T Sakai, S
Citation: Pg. Eliseev et al., Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire, J ELEC MAT, 29(3), 2000, pp. 332-341
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
Authors: Eliseev, PG Li, H Stintz, A Liu, GT Newell, TC Malloy, KJ Lester, LF
Citation: Pg. Eliseev et al., Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes, APPL PHYS L, 77(2), 2000, pp. 262-264
Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength
Authors: Eliseev, PG Sun, HB Juodkazis, S Sugahara, T Sakai, S Misawa, H
Citation: Pg. Eliseev et al., Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength, JPN J A P 2, 38(7B), 1999, pp. L839-L841
Ghost modes and resonant effects in AlGaN-InGaN-GaN lasers
Authors: Eliseev, PG Smolyakov, GA Osinski, M
Citation: Pg. Eliseev et al., Ghost modes and resonant effects in AlGaN-InGaN-GaN lasers, IEEE S T QU, 5(3), 1999, pp. 771-779
Single-quantum well InGaN green light emitting diode degradation under high electrical stress
Authors: Barton, DL Osinski, M Perlin, P Eliseev, PG Lee, J
Citation: Dl. Barton et al., Single-quantum well InGaN green light emitting diode degradation under high electrical stress, MICROEL REL, 39(8), 1999, pp. 1219-1227
Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
Authors: Eliseev, PG Osin'ski, M Li, H Akimova, IV
Citation: Pg. Eliseev et al., Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells, APPL PHYS L, 75(24), 1999, pp. 3838-3840
Radiation emitted by quantum-well InGaAs structures - I. Spontaneous emission spectra (vol 32, pg 423, 1998)
Authors: Eliseev, PG Akimova, IV
Citation: Pg. Eliseev et Iv. Akimova, Radiation emitted by quantum-well InGaAs structures - I. Spontaneous emission spectra (vol 32, pg 423, 1998), SEMICONDUCT, 32(11), 1998, pp. 1255-1255
High-temperature properties of InGaN light-emitting diodes
Authors: Akimova, IV Eliseev, PG Osinski, M
Citation: Iv. Akimova et al., High-temperature properties of InGaN light-emitting diodes, QUANTUM EL, 28(11), 1998, pp. 987-990
Risultati: 1-13 |