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Results: 1-13 |
Results: 13
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, J CRYST GR, 233(4), 2001, pp. 709-716
Localized variations in electronic structure of AlGaN/GaN heterostructuresgrown by molecular-beam epitaxy
Authors: Smith, KV Yu, ET Elsass, CR Heying, B Speck, JS
Citation: Kv. Smith et al., Localized variations in electronic structure of AlGaN/GaN heterostructuresgrown by molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2749-2751
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
Authors: Zhang, YF Smorchkova, IP Elsass, CR Keller, S Ibbetson, JP Denbaars, S Mishra, UK Singh, J
Citation: Yf. Zhang et al., Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies, J APPL PHYS, 87(11), 2000, pp. 7981-7987
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Authors: Smorchkova, IP Keller, S Heikman, S Elsass, CR Heying, B Fini, P Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers, APPL PHYS L, 77(24), 2000, pp. 3998-4000
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS
Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Elsass, CR Ibbetson, JP Vetury, R Heying, B Fini, P Haus, E DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4520-4526
Dislocation mediated surface morphology of GaN
Authors: Heying, B Tarsa, EJ Elsass, CR Fini, P DenBaars, SP Speck, JS
Citation: B. Heying et al., Dislocation mediated surface morphology of GaN, J APPL PHYS, 85(9), 1999, pp. 6470-6476
High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Maranowski, K Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(23), 1999, pp. 3528-3530
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