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Results:
1-10
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Results: 10
Authors:
Emziane, M
Le Ny, R
Citation: M. Emziane et R. Le Ny, Synthesis and properties of In-2(Se1-xTex)(3) thin films: a new semiconductor compound, APPL PHYS A, 72(1), 2001, pp. 73-79
Authors:
Emziane, M
Le Ny, R
Citation: M. Emziane et R. Le Ny, Photoconductivity of textured gamma-In2Se3-xTex (0 <= x <= 0.5) thin films' (vol 366, pg 191, 2000), THIN SOL FI, 385(1-2), 2001, pp. 312-312
Authors:
Emziane, M
Marsillac, S
Bernede, JC
Citation: M. Emziane et al., Preparation of highly oriented alpha-In2Se3 thin films by a simple technique, MATER CH PH, 62(1), 2000, pp. 84-87
Authors:
Emziane, M
Le Ny, R
Citation: M. Emziane et R. Le Ny, Photoconductivity of textured gamma-In2Se3-xTex (0 <= x <= 0.5) thin films, THIN SOL FI, 366(1-2), 2000, pp. 191-195
Authors:
Emziane, M
Le Ny, R
Citation: M. Emziane et R. Le Ny, Opto-electrical characterization of gamma-In2Se2.5Te0.5 thin layers, MATER RES B, 35(11), 2000, pp. 1849-1857
Authors:
Emziane, M
Bernede, JC
Ouerfelli, J
Essaidi, H
Barreau, A
Citation: M. Emziane et al., A novel method for preparing alpha-In2Te3 polycrystalline thin films, MATER CH PH, 61(3), 1999, pp. 229-236
Authors:
Marsillac, S
Bernede, JC
Emziane, M
Wery, J
Faulques, E
Le Ray, P
Citation: S. Marsillac et al., Properties of photoconductive In2Se3 thin films, crystallized by post-deposition heat treatment in nitrogen atmosphere, APPL SURF S, 151(3-4), 1999, pp. 171-179
Authors:
Marsillac, S
Bernede, JC
Emziane, M
Conan, A
Citation: S. Marsillac et al., New gamma-In2Se3/TCO (SnO2 or ZnO) thin films rectifying heterojunction (vol 315, pg 5, 1998), THIN SOL FI, 342(1-2), 1999, pp. 317-317
Authors:
Emziane, M
Le Ny, R
Citation: M. Emziane et R. Le Ny, Crystallization of In2Se3 semiconductor thin films by post-deposition heattreatment. Thickness and substrate effects, J PHYS D, 32(12), 1999, pp. 1319-1328
Authors:
Benchouk, K
El Moctar, C
Bernede, JC
Marsillac, S
Pouzet, J
Barreau, N
Emziane, M
Citation: K. Benchouk et al., Growth and physicochemical characterization of CuAlTe2 films obtained by reaction, induced by annealing, between Cu/Al/Te/Al/Cu ... Al/Cu/Al/Te layers sequentially deposited, J MATER SCI, 34(8), 1999, pp. 1847-1853
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1-10
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