Authors:
Chazalviel, JN
Erne, BH
Maroun, F
Ozanam, F
Citation: Jn. Chazalviel et al., In situ infrared spectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 509(2), 2001, pp. 108-118
Authors:
Chazalviel, JN
Erne, BH
Maroun, F
Ozanam, F
Citation: Jn. Chazalviel et al., New directions and challenges in modern electrochemistry: in situ infraredspectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 502(1-2), 2001, pp. 180-190
Authors:
Erne, BH
Ozanam, F
Stchakovsky, M
Vanmaekelbergh, D
Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part I: Identification of chemical species, J PHYS CH B, 104(25), 2000, pp. 5961-5973
Authors:
Erne, BH
Ozanam, F
Stchakovsky, M
Vanmaekelbergh, D
Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part II: Chemical origin of cathodic oscillations, J PHYS CH B, 104(25), 2000, pp. 5974-5985
Authors:
Chazalviel, JN
Belaidi, A
Safi, M
Maroun, F
Erne, BH
Ozanam, F
Citation: Jn. Chazalviel et al., In situ semiconductor surface characterisation: a comparative infrared study of Si, Ge and GaAs, ELECTR ACT, 45(20), 2000, pp. 3205-3211
Citation: Bh. Erne et al., The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy, J PHYS CH B, 103(15), 1999, pp. 2948-2962
Authors:
Erne, BH
Maroun, F
Ozanam, F
Chazalviel, JN
Citation: Bh. Erne et al., Local pH change during diffusion-limited proton reduction determined by insitu infrared spectroscopy, EL SOLID ST, 2(5), 1999, pp. 231-232
Citation: D. Vanmaekelbergh et Bh. Erne, Coupled partial ion-transfer steps in the anodic dissolution of metals, J ELCHEM SO, 146(7), 1999, pp. 2488-2494
Citation: D. Vanmaekelbergh et Bh. Erne, Coupled partial ion-transfer steps in the anodic dissolution of metals (vol 146, pg 2488, 1999), J ELCHEM SO, 146(11), 1999, pp. 4334-4334