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Results: 1-12 |
Results: 12
The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures
Authors: Vernon-Parry, KD Abd-El-Rahman, KF Brough, I Evans-Freeman, JH Zhang, J Peaker, AR
Citation: Kd. Vernon-parry et al., The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures, MAT SC S PR, 4(1-3), 2001, pp. 121-123
Separation of dislocation- and erbium-related photoluminescence by time resolved studies
Authors: Vernon-Parry, KD Evans-Freeman, JH Hawkins, ID Peaker, AR Dawson, P
Citation: Kd. Vernon-parry et al., Separation of dislocation- and erbium-related photoluminescence by time resolved studies, MAT SCI E B, 81(1-3), 2001, pp. 56-58
High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon
Authors: Kan, PYY Abd El-Rahman, KF Abdelgader, N Evans-Freeman, JH Peaker, AR
Citation: Pyy. Kan et al., High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 77-79
A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium
Authors: Vernon-Parry, KD Hawkins, ID Evans-Freeman, JH Dawson, P Peaker, AR
Citation: Kd. Vernon-parry et al., A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium, MAT SCI E B, 81(1-3), 2001, pp. 164-166
Effect of dislocations on the photoluminescence decay of 1.54 mu m emission from erbium-doped silicon
Authors: Vernon-Parry, KD Evans-Freeman, JH Hawkins, ID Dawson, P Peaker, AR
Citation: Kd. Vernon-parry et al., Effect of dislocations on the photoluminescence decay of 1.54 mu m emission from erbium-doped silicon, J APPL PHYS, 89(5), 2001, pp. 2715-2719
High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
Authors: Evans-Freeman, JH Peaker, AR Hawkins, ID Kan, PYY Terry, J Rubaldo, L Ahmed, M Watts, S Dobaczewski, L
Citation: Jh. Evans-freeman et al., High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon, MAT SC S PR, 3(4), 2000, pp. 237-241
Vacancy-related defects in ion implanted and electron irradiated silicon
Authors: Peaker, AR Evans-Freeman, JH Kan, PYY Hawkins, ID Terry, J Jeynes, C Rubaldo, L
Citation: Ar. Peaker et al., Vacancy-related defects in ion implanted and electron irradiated silicon, MAT SCI E B, 71, 2000, pp. 143-147
Erbium-doped Si1-xGex/Si structures for light emitting diodes
Authors: Naveed, AT Evans-Freeman, JH Vernon-Parry, KD Wright, AC Houghton, DC Peaker, AR
Citation: At. Naveed et al., Erbium-doped Si1-xGex/Si structures for light emitting diodes, SEMIC SCI T, 15(2), 2000, pp. 91-97
Gold-hydrogen complexes in silicon
Authors: Rubaldo, L Deixler, P Hawkins, ID Terry, J Maude, DK Portal, JC Evans-Freeman, JH Dobaczewski, L Peaker, AR
Citation: L. Rubaldo et al., Gold-hydrogen complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 126-129
Hydrogen reactions with electron irradiation damage in silicon
Authors: Peaker, AR Evans-Freeman, JH Kan, PYY Rubaldo, L Hawkins, ID Vernon-Parry, KD Dobaczewski, L
Citation: Ar. Peaker et al., Hydrogen reactions with electron irradiation damage in silicon, PHYSICA B, 274, 1999, pp. 243-246
Luminescence from erbium implanted silicon-germanium quantum wells
Authors: Huda, MQ Evans-Freeman, JH Peaker, AR Houghton, DC Nejim, A
Citation: Mq. Huda et al., Luminescence from erbium implanted silicon-germanium quantum wells, J VAC SCI B, 16(6), 1998, pp. 2928-2933
Erbium in silicon-germanium quantum wells
Authors: Naveed, AT Huda, MQ Abd El-Rahman, KF Hartung, J Evans-Freeman, JH Peaker, AR Houghton, DC Jeynes, C Gillin, WP
Citation: At. Naveed et al., Erbium in silicon-germanium quantum wells, J LUMINESC, 80(1-4), 1998, pp. 381-386
Risultati: 1-12 |