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Results: 1-7 |
Results: 7
MICRO-TECHNOLOGY OF DENSELY SPACED NONCONVENTIONAL PATTERNS FOR SPACEAPPLICATIONS
Authors: STANGL G HUDEK P KOSTIC I RUDENAUER F RANGELOW I RIEDLING K FALLMANN W
Citation: G. Stangl et al., MICRO-TECHNOLOGY OF DENSELY SPACED NONCONVENTIONAL PATTERNS FOR SPACEAPPLICATIONS, Microelectronic engineering, 42, 1998, pp. 187-190
PATTERNING OF MONOLAYERS OF CRYSTALLINE S-LAYER PROTEINS ON A SILICONSURFACE BY DEEP-ULTRAVIOLET RADIATION
Authors: PUM D STANGL G SPONER C RIEDLING K HUDEK P FALLMANN W SLEYTR UB
Citation: D. Pum et al., PATTERNING OF MONOLAYERS OF CRYSTALLINE S-LAYER PROTEINS ON A SILICONSURFACE BY DEEP-ULTRAVIOLET RADIATION, Microelectronic engineering, 35(1-4), 1997, pp. 297-300
MASKED ION-BEAM LITHOGRAPHY FOR PROXIMITY PRINTING
Authors: HAMMEL E LOSCHNER H STENGL G BUSCHBECK H CHALUPKA A VONACH H CEKAN E FALLMANN W PASCHKE F STANGL G
Citation: E. Hammel et al., MASKED ION-BEAM LITHOGRAPHY FOR PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 241-244
EVALUATION OF CRITICAL DESIGN PARAMETERS OF AN ION PROJECTOR FOR 1-GBIT DRAM PRODUCTION
Authors: BRUNGRE WH LOSCHNER H STENGL G FALLMANN W FINKELSTEIN W MELNGAILIS J
Citation: Wh. Brungre et al., EVALUATION OF CRITICAL DESIGN PARAMETERS OF AN ION PROJECTOR FOR 1-GBIT DRAM PRODUCTION, Microelectronic engineering, 27(1-4), 1995, pp. 323-326
CHEMICAL BONDING IN THIN GE C FILMS DEPOSITED FROM TETRAETHYLGERMANIUM IN AN RF GLOW-DISCHARGE - AN FTIR STUDY/
Authors: GAZICKI M SZYMANOWSKI H TYCZKOWSKI J MALINOVSKY L SCHALKO J FALLMANN W
Citation: M. Gazicki et al., CHEMICAL BONDING IN THIN GE C FILMS DEPOSITED FROM TETRAETHYLGERMANIUM IN AN RF GLOW-DISCHARGE - AN FTIR STUDY/, Thin solid films, 256(1-2), 1995, pp. 31-38
EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS
Authors: HAMMEL E CHALUPKA A FEGERL J FISCHER R LAMMER G LOSCHNER H MALEK L NOWAK R STENGL G VONACH H WOLF P BRUNGER WH BUCHMANN LM TORKLER M CEKAN E FALLMANN W PASCHKE F STANGL G THALINGER F BERRY IL HARRIOTT LR FINKELSTEIN W HILL RW
Citation: E. Hammel et al., EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3533-3538
NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS
Authors: STANGL G CEKAN E ECKES C FRIZA W THALINGER F BRUCKNER A HUDEK P FALLMANN W
Citation: G. Stangl et al., NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS, Microelectronic engineering, 21(1-4), 1993, pp. 245-250
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