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Results: 3
EXAMINATION OF THE TIME POWER-LAW DEPENDENCIES IN HOT-CARRIER STRESSING OF N-MOS TRANSISTORS
Authors: DOYLE BS MISTRY KR FARICELLI J
Citation: Bs. Doyle et al., EXAMINATION OF THE TIME POWER-LAW DEPENDENCIES IN HOT-CARRIER STRESSING OF N-MOS TRANSISTORS, IEEE electron device letters, 18(2), 1997, pp. 51-53
2-DIMENSIONAL DOPANT PROFILING OF SUBMICRON METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR USING NONLINEAR LEAST-SQUARES INVERSE MODELING
Authors: KHALIL N FARICELLI J HUANG CL SELBERHERR S
Citation: N. Khalil et al., 2-DIMENSIONAL DOPANT PROFILING OF SUBMICRON METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR USING NONLINEAR LEAST-SQUARES INVERSE MODELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 224-230
THE EXTRACTION OF 2-DIMENSIONAL MOS-TRANSISTOR DOPING VIA INVERSE MODELING
Authors: KHALIL N FARICELLI J BELL D SELBERHERR S
Citation: N. Khalil et al., THE EXTRACTION OF 2-DIMENSIONAL MOS-TRANSISTOR DOPING VIA INVERSE MODELING, IEEE electron device letters, 16(1), 1995, pp. 17-19
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