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Results:
1-8
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Results: 8
Authors:
HOFFMAN RW
FATEMI NS
WEIZER VG
JENKINS PP
STAN MA
RINGEL SA
SCHEIMAN DA
WILT DM
BRINKER DJ
Citation: Rw. Hoffman et al., HIGH BEGINNING-OF-LIFE EFFICIENCY P N INP SOLAR-CELLS/, Progress in photovoltaics, 5(6), 1997, pp. 415-422
Authors:
WEIZER VG
FATEMI NS
Citation: Vg. Weizer et Ns. Fatemi, A UNIQUE, DEVICE-FRIENDLY CONTACT SYSTEM FOR SHALLOW JUNCTION P N INDIUM-PHOSPHIDE DEVICES/, Journal of electronic materials, 25(4), 1996, pp. 755-760
Authors:
FATEMI NS
WEIZER VG
Citation: Ns. Fatemi et Vg. Weizer, ELECTRICAL AND METALLURGICAL BEHAVIOR OF AU ZN CONTACTS TO P-TYPE INDIUM-PHOSPHIDE/, Journal of applied physics, 77(10), 1995, pp. 5241-5247
Authors:
JENKINS P
LANDIS GA
FATEMI NS
SCHEIMAN D
LI XN
BAILEY SG
Citation: P. Jenkins et al., AN INP SOLAR-CELL WITH A LIGHT-TRAPPING FRONT SURFACE, Solar energy materials and solar cells, 33(2), 1994, pp. 125-133
Authors:
WILT DM
FATEMI NS
HOFFMAN RW
JENKINS PP
BRINKER DJ
SCHEIMAN D
LOWE R
FAUER M
JAIN RK
Citation: Dm. Wilt et al., HIGH-EFFICIENCY INDIUM GALLIUM-ARSENIDE PHOTOVOLTAIC DEVICES FOR THERMOPHOTOVOLTAIC POWER-SYSTEMS, Applied physics letters, 64(18), 1994, pp. 2415-2417
Authors:
FATEMI NS
WEIZER VG
Citation: Ns. Fatemi et Vg. Weizer, THE ACHIEVEMENT OF NEAR-THEORETICAL-MINIMUM CONTACT RESISTANCE TO INP, Journal of applied physics, 74(11), 1993, pp. 6740-6746
Authors:
LANDIS GA
FATEMI NS
YOUNG MJ
BAILEY SG
Citation: Ga. Landis et al., MASKLESS TEXTURE ETCHING OF GAAS, Journal of the Electrochemical Society, 140(12), 1993, pp. 120000183-120000184
Authors:
WEIZER VG
FATEMI NS
Citation: Vg. Weizer et Ns. Fatemi, SIMPLE, EXTREMELY LOW RESISTANCE CONTACT SYSTEM TO N-INP THAT DOES NOT EXHIBIT METAL-SEMICONDUCTOR INTERMIXING DURING SINTERING, Applied physics letters, 62(21), 1993, pp. 2731-2733
Risultati:
1-8
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