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Results: 1-8 |
Results: 8
V-BAND HIGH-POWER LOW-VOLTAGE INGAAS/INP COMPOSITE CHANNEL HEMTS/
Authors: CHEVALIER P WALLART X BONTE B FAUQUEMBERGUE R
Citation: P. Chevalier et al., V-BAND HIGH-POWER LOW-VOLTAGE INGAAS/INP COMPOSITE CHANNEL HEMTS/, Electronics Letters, 34(4), 1998, pp. 409-411
COMPARISON OF WURTZITE AND ZINC BLENDE III-V NITRIDES FIELD-EFFECT TRANSISTORS - A 2D MONTE-CARLO DEVICE SIMULATION
Authors: DESSENNE F CICHOCKA D DESPLANQUES P FAUQUEMBERGUE R
Citation: F. Dessenne et al., COMPARISON OF WURTZITE AND ZINC BLENDE III-V NITRIDES FIELD-EFFECT TRANSISTORS - A 2D MONTE-CARLO DEVICE SIMULATION, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 315-318
MONTE-CARLO STUDY OF DIFFUSION PHENOMENA IN III-V MODULATION-DOPED HETEROSTRUCTURES
Authors: SLEIMAN A THOBEL JL BOUREL P DESSENNE F FAUQUEMBERGUE R
Citation: A. Sleiman et al., MONTE-CARLO STUDY OF DIFFUSION PHENOMENA IN III-V MODULATION-DOPED HETEROSTRUCTURES, Semiconductor science and technology, 12(1), 1997, pp. 69-76
DETERMINATION OF DIFFUSION-COEFFICIENTS IN DEGENERATE ELECTRON-GAS USING MONTE-CARLO SIMULATION
Authors: THOBEL JL SLEIMAN A FAUQUEMBERGUE R
Citation: Jl. Thobel et al., DETERMINATION OF DIFFUSION-COEFFICIENTS IN DEGENERATE ELECTRON-GAS USING MONTE-CARLO SIMULATION, Journal of applied physics, 82(3), 1997, pp. 1220-1226
MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS USINGAN ANALYTICAL BAND-STRUCTURE MODEL
Authors: MOUTON O THOBEL JL FAUQUEMBERGUE R
Citation: O. Mouton et al., MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS USINGAN ANALYTICAL BAND-STRUCTURE MODEL, Journal of applied physics, 81(7), 1997, pp. 3160-3169
RAMAN CHARACTERIZATION OF AN OPERATING INALAS-INGAAS-INP HIGH ELECTRONIC MOBILITY TRANSISTOR
Authors: MATRULLO N CONSTANT M SAGON G FAUQUEMBERGUE R LEROY A
Citation: N. Matrullo et al., RAMAN CHARACTERIZATION OF AN OPERATING INALAS-INGAAS-INP HIGH ELECTRONIC MOBILITY TRANSISTOR, Journal of Raman spectroscopy, 26(2), 1995, pp. 167-172
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
RAMAN-SCATTERING IN INXGA1-XAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: CONSTANT M MATRULLO N LORRIAUX A FAUQUEMBERGUE R DRUELLE Y DIPERSIO J
Citation: M. Constant et al., RAMAN-SCATTERING IN INXGA1-XAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 69-72
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