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Results: 1-13 |
Results: 13
CAN SKIN-TESTS FOR TUBERCULOSIS BE READ AT ONE WEEK - PRELIMINARY-REPORT
Authors: PALMER J STERN EG FEHRER M PEREZ J BURGOS E ROMO A JACKSON J DOMINGUEZ M AGUIRRE E
Citation: J. Palmer et al., CAN SKIN-TESTS FOR TUBERCULOSIS BE READ AT ONE WEEK - PRELIMINARY-REPORT, Journal of investigative medicine, 46(1), 1998, pp. 80-80
COMPARISON OF LONG-TIME DELAY IN LASING IN HOMO-EPITAXIALLY AND HETEROEPITAXIALLY GROWN II-VI LASER-DIODES
Authors: ISEMANN A BEHRINGER M WENISCH H FEHRER M OHKAWA K HOMMEL D
Citation: A. Isemann et al., COMPARISON OF LONG-TIME DELAY IN LASING IN HOMO-EPITAXIALLY AND HETEROEPITAXIALLY GROWN II-VI LASER-DIODES, Acta Physica Polonica. A, 94(2), 1998, pp. 355-358
IMPACT OF DEFECTS ON THE CARRIER TRANSPORT IN GAN
Authors: FEHRER M EINFELDT S BIRKLE U GOLLNIK T HOMMEL D
Citation: M. Fehrer et al., IMPACT OF DEFECTS ON THE CARRIER TRANSPORT IN GAN, Journal of crystal growth, 190, 1998, pp. 763-767
ELECTRICAL-TRANSPORT AND TRAP PROPERTIES IN NITROGEN-DOPED P-TYPE MBE-GROWN ZNSE LAYERS ON GAAS USING DIFFERENT CONTACT MATERIALS
Authors: PROSCH G BEYER R BEHRINGER M FEHRER M BURGHARDT H THOMAS E HOMMEL D ZAHN DRT
Citation: G. Prosch et al., ELECTRICAL-TRANSPORT AND TRAP PROPERTIES IN NITROGEN-DOPED P-TYPE MBE-GROWN ZNSE LAYERS ON GAAS USING DIFFERENT CONTACT MATERIALS, Journal of crystal growth, 185, 1998, pp. 440-444
STABILITY ISSUES OF QUATERNARY CDZNSSE AND TERNARY CDZNSE QUANTUM-WELLS IN BLUE-GREEN LASER-DIODES
Authors: BEHRINGER M OHKAWA K GROSSMANN V HEINKE H LEONARDI K FEHRER M HOMMEL D KUTTLER M STRASSBURG M BIMBERG D
Citation: M. Behringer et al., STABILITY ISSUES OF QUATERNARY CDZNSSE AND TERNARY CDZNSE QUANTUM-WELLS IN BLUE-GREEN LASER-DIODES, Journal of crystal growth, 185, 1998, pp. 580-584
ELECTROABSORPTION IN LOW-DIMENSIONAL AND BULK-LIKE ZN1-XCDXSE
Authors: EBELING W MERBACH D BEHRINGER M FEHRER M MICHLER P GUTOWSKI J SCHOLL E HOMMEL D
Citation: W. Ebeling et al., ELECTROABSORPTION IN LOW-DIMENSIONAL AND BULK-LIKE ZN1-XCDXSE, Journal of crystal growth, 185, 1998, pp. 706-709
PLANAR HOMOEPITAXIAL LASER-DIODES GROWN ON ALUMINUM-DOPED ZNSE SUBSTRATES
Authors: WENISCH H OHKAWA K ISEMANN A FEHRER M HOMMEL D
Citation: H. Wenisch et al., PLANAR HOMOEPITAXIAL LASER-DIODES GROWN ON ALUMINUM-DOPED ZNSE SUBSTRATES, Electronics Letters, 34(9), 1998, pp. 891-893
QUANTUM-CONFINED STARK-EFFECT OF II-VI HETEROSTRUCTURES SUITABLE AS MODULATORS IN THE BLUE-GREEN SPECTRAL REGION
Authors: MICHLER P LILIENKAMP T EBELING W GUTOWSKI J BEHRINGER M FEHRER M HOMMEL D
Citation: P. Michler et al., QUANTUM-CONFINED STARK-EFFECT OF II-VI HETEROSTRUCTURES SUITABLE AS MODULATORS IN THE BLUE-GREEN SPECTRAL REGION, Applied physics letters, 72(25), 1998, pp. 3320-3322
PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN
Authors: EINFELDT S BIRKLE U THOMAS C FEHRER M HEINKE H HOMMEL D
Citation: S. Einfeldt et al., PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 12-15
ZNSE-BASED LASER-DIODES AND LEDS GROWN ON ZNSE AND GAAS SUBSTRATES
Authors: OHKAWA K BEHRINGER N WENISCH H FEHRER M JOBST B HOMMEL D KUTTLER M STRASSBURG M BIMBERG D BACHER G TONNIES D FORCHEL A
Citation: K. Ohkawa et al., ZNSE-BASED LASER-DIODES AND LEDS GROWN ON ZNSE AND GAAS SUBSTRATES, Physica status solidi. b, Basic research, 202(2), 1997, pp. 683-693
NITROGEN-DOPED ZNSE LAYERS ON GAAS .2. HOLE TRAP GENERATION INDUCED BY THERMAL-TREATMENT AND ELECTRICAL STRESS
Authors: PROSCH G HELLIG K BEHRINGER M FEHRER M BEYER R HOMMEL D ZAHN DRT
Citation: G. Prosch et al., NITROGEN-DOPED ZNSE LAYERS ON GAAS .2. HOLE TRAP GENERATION INDUCED BY THERMAL-TREATMENT AND ELECTRICAL STRESS, Physica status solidi. b, Basic research, 202(2), 1997, pp. 895-901
INTERNAL PHOTOLUMINESCENCE AND LIFETIME OF LIGHT-EMITTING-DIODES ON CONDUCTIVE ZNSE SUBSTRATES
Authors: WENISCH H FEHRER M OHKAWA K HOMMEL D PROKESCH M RINAS U HARTMANN H
Citation: H. Wenisch et al., INTERNAL PHOTOLUMINESCENCE AND LIFETIME OF LIGHT-EMITTING-DIODES ON CONDUCTIVE ZNSE SUBSTRATES, Journal of applied physics, 82(9), 1997, pp. 4690-4692
HOLE TRAP GENERATION BY THERMAL-TREATMENT OF NITROGEN-DOPED P-TYPE ZNSE ON GAAS CHARACTERIZED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: HELLIG K PROSCH G BEHRINGER M FEHRER M BEYER R BURGHARDT H HOMMEL D ZAHN DRT
Citation: K. Hellig et al., HOLE TRAP GENERATION BY THERMAL-TREATMENT OF NITROGEN-DOPED P-TYPE ZNSE ON GAAS CHARACTERIZED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 71(15), 1997, pp. 2187-2189
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