Authors: FEKLISOVA OV YARYKIN NA

Citation: Ov. Feklisova et Na. Yarykin, TRANSFORMATION OF DEEP-LEVEL SPECTRUM OF IRRADIATED SILICON DUE TO HYDROGENATION UNDER WET CHEMICAL ETCHING, Semiconductor science and technology, 12(6), 1997, pp. 742-749

Authors: PARAKHONSKII AL FEKLISOVA OV KARELIN SS YARYKIN NA

Citation: Al. Parakhonskii et al., SUCCESSIVE TRANSFORMATIONS OF GOLD-CONTAINING COMPLEXES IN N-TYPE SILICON SATURATED WITH ATOMIC-HYDROGEN, Semiconductors, 30(4), 1996, pp. 362-364

Authors: KONONCHUK OV FEKLISOVA OV YAKIMOV EB YARYKIN NA ORLOV VI

Citation: Ov. Kononchuk et al., FORMATION OF THE SPECTRUM OF DEEP LEVELS IN PLASTICALLY DEFORMED DURING THE EXPANSION OF DISLOCATION LOOPS, Semiconductors, 30(2), 1996, pp. 143-147

Authors: FEKLISOVA OV YAKIMOV EB YARYKIN NA

Citation: Ov. Feklisova et al., EFFECT OF IRRADIATION IN SEM ON ELECTRICAL-PROPERTIES OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 274-276

Authors: FEKLISOVA OV YAKIMOV EB YARYKIN NA

Citation: Ov. Feklisova et al., DEFECT FORMATION IN GOLD-DOPED SILICON IRRADIATED WITH LOW-ENERGY ELECTRONS, Semiconductors, 28(12), 1994, pp. 1201-1203

Authors: BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM FEKLISOVA OV YARYKIN NA

Citation: Sn. Boldyrev et al., EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON, Semiconductors, 28(10), 1994, pp. 1009-1011