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Results: 1-8 |
Results: 8
TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2
Authors: HARRINGTON WL MAGEE CW PAWLIK M DOWNEY DF OSBURN CM FELCH SB
Citation: Wl. Harrington et al., TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 286-291
PROCESS EFFECTS IN SHALLOW JUNCTION FORMATION BY PLASMA DOPING
Authors: MATYI RJ FELCH SB LEE BS STRATHMAN MR KEENAN JA GUO Y WANG L
Citation: Rj. Matyi et al., PROCESS EFFECTS IN SHALLOW JUNCTION FORMATION BY PLASMA DOPING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 435-439
CHARACTERIZATION OF ULTRA-SHALLOW P(-N JUNCTIONS FORMED BY PLASMA DOPING WITH BF3 AND N-2 PLASMAS())
Authors: FELCH SB LEE BS DARYANANI SL DOWNEY DF MATYI RJ
Citation: Sb. Felch et al., CHARACTERIZATION OF ULTRA-SHALLOW P(-N JUNCTIONS FORMED BY PLASMA DOPING WITH BF3 AND N-2 PLASMAS()), Materials chemistry and physics, 54(1-3), 1998, pp. 37-43
BORON DOPING OF SILICON BY PLASMA SOURCE ION-IMPLANTATION
Authors: MATYI RJ CHAPEK DL BRUNCO DP FELCH SB LEE BS
Citation: Rj. Matyi et al., BORON DOPING OF SILICON BY PLASMA SOURCE ION-IMPLANTATION, Surface & coatings technology, 93(2-3), 1997, pp. 247-253
COMPARISON OF DIFFERENT ANALYTICAL TECHNIQUES IN MEASURING THE SURFACE REGION OF ULTRASHALLOW DOPING PROFILES
Authors: FELCH SB CHAPEK DL MALIK SM MAILLOT P ISHIDA E MAGEE CW
Citation: Sb. Felch et al., COMPARISON OF DIFFERENT ANALYTICAL TECHNIQUES IN MEASURING THE SURFACE REGION OF ULTRASHALLOW DOPING PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 336-340
STUDY OF ELECTRICAL MEASUREMENT TECHNIQUES FOR ULTRA-SHALLOW DOPANT PROFILING
Authors: ISHIDA E FELCH SB
Citation: E. Ishida et Sb. Felch, STUDY OF ELECTRICAL MEASUREMENT TECHNIQUES FOR ULTRA-SHALLOW DOPANT PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 397-403
STRUCTURAL CHARACTERIZATION OF PLASMA-DOPED SILICON BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: CHAPEK DL CONRAD JR MATYI RJ FELCH SB
Citation: Dl. Chapek et al., STRUCTURAL CHARACTERIZATION OF PLASMA-DOPED SILICON BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 951-955
CHARACTERISTICS OF A PLASMA DOPING SYSTEM FOR SEMICONDUCTOR-DEVICE FABRICATION
Authors: SHENG T FELCH SB COOPER CB
Citation: T. Sheng et al., CHARACTERISTICS OF A PLASMA DOPING SYSTEM FOR SEMICONDUCTOR-DEVICE FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 969-972
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