Authors:
YASUDA K
HATANO H
FERID T
MINAMIDE M
MAEJIMA T
KAWAMOTO K
Citation: K. Yasuda et al., GROWTH-CHARACTERISTICS OF (100)HGCDTE LAYERS IN LOW-TEMPERATURE MOVPEWITH DITERTIARYBUTYLTELLURIDE, Journal of crystal growth, 166(1-4), 1996, pp. 612-616
Authors:
YASUDA K
HATANO H
FERID T
KAWAMOTO K
MAEJIMA T
MINAMIDE M
Citation: K. Yasuda et al., LOW-TEMPERATURE GROWTH OF (100) HGCDTE LAYERS WITH DTBTE IN METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 24(9), 1995, pp. 1093-1097
Authors:
FERID T
YASUDA K
HATANO H
MAEJIMA T
MINAMIDE M
KAWAMOTO K
Citation: T. Ferid et al., ELECTRICAL-PROPERTIES OF HG1-XCDXTE GROWN BY LOW-TEMPERATURE METALORGANIC VAPOR-PHASE EPITAXY, JPN J A P 1, 33(12A), 1994, pp. 6481-6485