AAAAAA
Results:
1-7
|
Results: 7
Authors:
FERRIEU F
MORIN C
REGOLINI JL
Citation: F. Ferrieu et al., OPTICAL CHARACTERIZATION BY SPECTROSCOPIC ELLIPSOMETRY OF POLYCRYSTALLINE SI1-XGEX OF VARIABLE GE COMPOSITION UP TO 100-PERCENT GE, Thin solid films, 315(1-2), 1998, pp. 316-321
Authors:
FERRIEU F
Citation: F. Ferrieu, OBSERVATION OF A LEAKY-WAVE GUIDE RESONANCE MODE IN POLYCRYSTALLINE SILICON STRUCTURES USING INFRARED SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 73(16), 1998, pp. 2316-2318
Authors:
VALLON S
JOUBERT O
VALLIER L
FERRIEU F
DREVILLON B
BLAYO N
Citation: S. Vallon et al., REAL-TIME ULTRAVIOLET ELLIPSOMETRY MONITORING OF GATE PATTERNING IN AHIGH-DENSITY PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 865-870
Authors:
REGOLINI JL
BODNAR S
OBERLIN JC
FERRIEU F
GAUNEAU M
LAMBERT B
BOUCAUD P
Citation: Jl. Regolini et al., STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1015-1019
Authors:
BOUCAUD P
GLOWACKI F
CAMPIDELLI Y
LARRE A
FERRIEU F
BENSAHEL D
Citation: P. Boucaud et al., GROWTH AND IN-SITU ELLIPSOMETRIC ANALYSIS OF SI1-XGEX ALLOYS DEPOSITED BY CHEMICAL BEAM EPITAXY, Journal of electronic materials, 23(6), 1994, pp. 565-568
Authors:
BOUCAUD P
GLOWACKI F
FERRIEU F
LARRE A
PERIO A
BENSAHEL D
Citation: P. Boucaud et al., IN-SITU ELLIPSOMETRIC CONTROL OF SI1-XGEX SI HETEROSTRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Thin solid films, 248(1), 1994, pp. 1-5
Authors:
LARRE A
HALIMAOUI A
GLOWACKI F
FERRIEU F
CAMPIDELLI Y
BENSAHEL D
Citation: A. Larre et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF POROUS SILICON LAYERS ANNEALED UNDER ULTRAHIGH-VACUUM, Applied physics letters, 65(12), 1994, pp. 1566-1568
Risultati:
1-7
|