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Results:
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Results: 10
Authors:
MUSCATO O
PIDATELLA RM
FISCHETTI MV
Citation: O. Muscato et al., MONTE-CARLO AND HYDRODYNAMIC SIMULATION OF A ONE-DIMENSIONAL N(-N-N(+) SILICON DIODE()), VLSI design (Print), 6(1-4), 1998, pp. 247-250
Authors:
FISCHETTI MV
Citation: Mv. Fischetti, THEORY OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES USING THEPAULI MASTER EQUATION (VOL 83, PG 270, 1998), Journal of applied physics, 83(11), 1998, pp. 6202-6202
Authors:
FISCHETTI MV
Citation: Mv. Fischetti, THEORY OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES USING THEPAULI MASTER EQUATION, Journal of applied physics, 83(1), 1998, pp. 270-291
Authors:
CARTIER E
TSANG JC
FISCHETTI MV
BUCHANAN DA
Citation: E. Cartier et al., LIGHT-EMISSION DURING DIRECT AND FOWLER-NORDHEIM TUNNELING IN ULTRA-THIN MOS TUNNEL-JUNCTIONS, Microelectronic engineering, 36(1-4), 1997, pp. 103-106
Authors:
FISCHETTI MV
LAUX SE
Citation: Mv. Fischetti et Se. Laux, BAND-STRUCTURE, DEFORMATION POTENTALS, AND CARRIER MOBILITY IN STRAINED SI, GE, AND SIGE ALLOYS, Journal of applied physics, 80(4), 1996, pp. 2234-2252
Authors:
FISCHETTI MV
LAUX SE
CRABBE E
Citation: Mv. Fischetti et al., UNDERSTANDING HOT-ELECTRON TRANSPORT IN SILICON DEVICES - IS THERE A SHORTCUT, Journal of applied physics, 78(2), 1995, pp. 1058-1087
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
FISCHETTI MV
Citation: Mv. Fischetti, OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE - COMMENT, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1680-1681
Authors:
FRANK DJ
LAUX SE
FISCHETTI MV
Citation: Dj. Frank et al., IIA-7 MONTE-CARLO SIMULATIONS OF P-CHANNEL AND N-CHANNEL DUAL-GATE SIMOSFETS AT THE LIMITS OF SCALING, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2103-2103
Authors:
CARTIER E
FISCHETTI MV
EKLUND EA
MCFEELY FR
Citation: E. Cartier et al., IMPACT IONIZATION IN SILICON, Applied physics letters, 62(25), 1993, pp. 3339-3341
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