AAAAAA

   
Results: 1-13 |
Results: 13
A HIGH-CURRENT AND HIGH-TEMPERATURE 6H-SIC THYRISTOR
Authors: XIE K ZHAO JH FLEMISH JR BURKE T BUCHWALD WR LORENZO G SINGH H
Citation: K. Xie et al., A HIGH-CURRENT AND HIGH-TEMPERATURE 6H-SIC THYRISTOR, IEEE electron device letters, 17(3), 1996, pp. 142-144
COMPARISON OF OMVPE AND MBE GROWN ALGAAS INGAAS PHEMT STRUCTURES/
Authors: LAREAU RT JONES KA MONAHAN T FLEMISH JR PFEFFER RL SHERRIFF RE LITTON CW JONES R STUTZ CE LOOK DC
Citation: Rt. Lareau et al., COMPARISON OF OMVPE AND MBE GROWN ALGAAS INGAAS PHEMT STRUCTURES/, Journal of crystal growth, 167(3-4), 1996, pp. 406-414
PROFILE AND MORPHOLOGY CONTROL DURING ETCHING OF SIC USING ELECTRON-CYCLOTRON RESONANT PLASMAS
Authors: FLEMISH JR XIE K
Citation: Jr. Flemish et K. Xie, PROFILE AND MORPHOLOGY CONTROL DURING ETCHING OF SIC USING ELECTRON-CYCLOTRON RESONANT PLASMAS, Journal of the Electrochemical Society, 143(8), 1996, pp. 2620-2623
HIGH ETCH RATES OF SIC IN MAGNETRON ENHANCED SF6 PLASMAS
Authors: MCLANE GF FLEMISH JR
Citation: Gf. Mclane et Jr. Flemish, HIGH ETCH RATES OF SIC IN MAGNETRON ENHANCED SF6 PLASMAS, Applied physics letters, 68(26), 1996, pp. 3755-3757
COMPARISON OF OMVPE GROWN GAAS ALGAAS AND GAAS/INGAP HEMT AND PHEMT STRUCTURES/
Authors: JONES KA LAREAU RT MONAHAN T FLEMISH JR PFEFFER RL SHERRIFF RE LITTON CW JONES RL STUTZ CE LOOK DC
Citation: Ka. Jones et al., COMPARISON OF OMVPE GROWN GAAS ALGAAS AND GAAS/INGAP HEMT AND PHEMT STRUCTURES/, Journal of electronic materials, 24(11), 1995, pp. 1641-1648
ION-IMPLANTATION AND ACTIVATION OF ALUMINUM IN 6H-SIC
Authors: FLEMISH JR XIE K DU H WITHROW SP
Citation: Jr. Flemish et al., ION-IMPLANTATION AND ACTIVATION OF ALUMINUM IN 6H-SIC, Journal of the Electrochemical Society, 142(9), 1995, pp. 144-146
LOW DAMAGE AND RESIDUE-FREE DRY-ETCHING OF 6H-SIC USING ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: XIE K FLEMISH JR ZHAO JH BUCHWALD WR CASAS L
Citation: K. Xie et al., LOW DAMAGE AND RESIDUE-FREE DRY-ETCHING OF 6H-SIC USING ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(3), 1995, pp. 368-370
GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS
Authors: FLEMISH JR SCHAUER SN WITTSTRUCK R LANDSTRASS MI PLANO MA
Citation: Jr. Flemish et al., GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 672-676
ACCURATELY DETERMINING THE COMPOSITION AND THICKNESS OF LAYERS IN A GAAS INGAAS SUPERLATTICE/
Authors: JONES KA COLE MW COOKE P FLEMISH JR PFEFFER RL SHEN H
Citation: Ka. Jones et al., ACCURATELY DETERMINING THE COMPOSITION AND THICKNESS OF LAYERS IN A GAAS INGAAS SUPERLATTICE/, Journal of applied physics, 76(3), 1994, pp. 1609-1614
PHOSPHORUS INCORPORATION IN PLASMA-DEPOSITED DIAMOND FILMS
Authors: SCHAUER SN FLEMISH JR WITTSTRUCK R LANDSTRASS MI PLANO MA
Citation: Sn. Schauer et al., PHOSPHORUS INCORPORATION IN PLASMA-DEPOSITED DIAMOND FILMS, Applied physics letters, 64(9), 1994, pp. 1094-1096
SMOOTH ETCHING OF SINGLE-CRYSTAL 6H-SIC IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR
Authors: FLEMISH JR XIE K ZHAO JH
Citation: Jr. Flemish et al., SMOOTH ETCHING OF SINGLE-CRYSTAL 6H-SIC IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR, Applied physics letters, 64(17), 1994, pp. 2315-2317
LOW HYDROGEN CONTENT SILICON-NITRIDE FILMS FROM ELECTRON-CYCLOTRON-RESONANCE PLASMAS
Authors: FLEMISH JR PFEFFER RL
Citation: Jr. Flemish et Rl. Pfeffer, LOW HYDROGEN CONTENT SILICON-NITRIDE FILMS FROM ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of applied physics, 74(5), 1993, pp. 3277-3281
EFFECTS OF ANNEALING CONDITIONS ON HEAVILY CARBON-DOPED INGAAS
Authors: HAN WY CALDERON L LU Y SCHAUER SN MOERKIRK RP LEE HS FLEMISH JR JONES KA YANG LW
Citation: Wy. Han et al., EFFECTS OF ANNEALING CONDITIONS ON HEAVILY CARBON-DOPED INGAAS, Applied physics letters, 62(20), 1993, pp. 2578-2580
Risultati: 1-13 |