Authors:
ROTHSCHILD M
BURNS JA
CANN SG
FORTE AR
KEAST CL
KUNZ RR
PALMATEER SC
SEDLACEK JHC
UTTARO R
GRENVILLE A
CORLISS D
Citation: M. Rothschild et al., HOW PRACTICAL IS 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4157-4161
Citation: Sc. Palmateer et al., DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1132-1136