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Results: 1-15 |
Results: 15
THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS
Authors: CORNI F FRABBONI S TONINI R LEONE D DEBOER W GASPAROTTO A
Citation: F. Corni et al., THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS, JPN J A P 2, 37(3B), 1998, pp. 339-342
DETERMINATION OF BULK MISMATCH VALUES IN TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONS OF HETEROSTRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION
Authors: BALBONI R FRABBONI S ARMIGLIATO A
Citation: R. Balboni et al., DETERMINATION OF BULK MISMATCH VALUES IN TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONS OF HETEROSTRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 67-83
STATIC DISORDER DEPTH PROFILE IN ION-IMPLANTED MATERIALS BY MEANS OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION
Authors: FRABBONI S GAMBETTA F
Citation: S. Frabboni et F. Gambetta, STATIC DISORDER DEPTH PROFILE IN ION-IMPLANTED MATERIALS BY MEANS OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Physical review letters, 81(15), 1998, pp. 3155-3158
ON THE SPATIAL-RESOLUTION IN ANALYTICAL ELECTRON-MICROSCOPY
Authors: ARMIGLIATO A HOWARD DJ BALBONI R FRABBONI S CAYMAX MR
Citation: A. Armigliato et al., ON THE SPATIAL-RESOLUTION IN ANALYTICAL ELECTRON-MICROSCOPY, Mikrochimica acta (1966), 1998, pp. 59-64
GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON
Authors: BISERO D CORNI F FRABBONI S TONINI R OTTAVIANI G BALBONI R
Citation: D. Bisero et al., GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON, Journal of applied physics, 83(8), 1998, pp. 4106-4110
STRAIN-MEASUREMENTS IN THIN-FILM STRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION
Authors: ARMIGLIATO A BALBONI R BENEDETTI A FRABBONI S TIXIER A VANHELLEMONT J
Citation: A. Armigliato et al., STRAIN-MEASUREMENTS IN THIN-FILM STRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Journal de physique. III, 7(12), 1997, pp. 2375-2381
SILICON INTERSTITIALS GENERATION DURING THE EXPOSURE OF SILICON TO HYDROGEN PLASMA
Authors: TONINI R MONELLI A CORNI F FRABBONI S OTTAVIANI G QUEIROLO G
Citation: R. Tonini et al., SILICON INTERSTITIALS GENERATION DURING THE EXPOSURE OF SILICON TO HYDROGEN PLASMA, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 158-161
STRESS AND INTERFACE MORPHOLOGY CONTRIBUTIONS IN THE CRYSTALLIZATION KINETICS OF A GEXSI1-X THIN-LAYER ON (100)SI
Authors: CORNI F FRABBONI S TONINI R OTTAVIANI G QUEIROLO G
Citation: F. Corni et al., STRESS AND INTERFACE MORPHOLOGY CONTRIBUTIONS IN THE CRYSTALLIZATION KINETICS OF A GEXSI1-X THIN-LAYER ON (100)SI, Journal of applied physics, 79(7), 1996, pp. 3528-3533
BULK MISMATCH VALUES OF HETEROSTRUCTURES AS DETERMINED FROM CONVERGENT-BEAM ELECTRON-DIFFRACTION ON THIN CROSS-SECTIONS
Authors: BALBONI R ARMIGLIATO A FRABBONI S
Citation: R. Balboni et al., BULK MISMATCH VALUES OF HETEROSTRUCTURES AS DETERMINED FROM CONVERGENT-BEAM ELECTRON-DIFFRACTION ON THIN CROSS-SECTIONS, Applied physics letters, 68(20), 1996, pp. 2831-2833
INFLUENCE OF EXPERIMENTAL PARAMETERS ON THE DETERMINATION OF TETRAGONAL DISTORTION IN HETEROSTRUCTURES BY LACBED
Authors: ARMIGLIATO A BALBONI R CORTICELLI F FRABBONI S
Citation: A. Armigliato et al., INFLUENCE OF EXPERIMENTAL PARAMETERS ON THE DETERMINATION OF TETRAGONAL DISTORTION IN HETEROSTRUCTURES BY LACBED, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 449-456
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES/
Authors: ARMIGLIATO A BALBONI R CORTICELLI F FRABBONI S MALVEZZI F
Citation: A. Armigliato et al., ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES/, Materials science and technology, 11(4), 1995, pp. 400-406
HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON
Authors: CEROFOLINI GF BALBONI R BISERO D CORNI F FRABBONI S OTTAVIANI G TONINI R BRUSA RS ZECCA A CESCHINI M GIEBEL G PAVESI L
Citation: Gf. Cerofolini et al., HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON, Physica status solidi. a, Applied research, 150(2), 1995, pp. 539-586
ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES
Authors: ARMIGLIATO A GOVONI D BALBONI R FRABBONI S BERTI M ROMANATO F DRIGO AV
Citation: A. Armigliato et al., ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 175-185
X-RAY-EMISSION MODULATION BY ELECTRON CHANNELING AND SITE OCCUPANCY IN GARNETS
Authors: BALBONI R FRABBONI S RINALDI R SPIGARELLI S
Citation: R. Balboni et al., X-RAY-EMISSION MODULATION BY ELECTRON CHANNELING AND SITE OCCUPANCY IN GARNETS, Mikrochimica acta, 114, 1994, pp. 187-194
GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL
Authors: CEROFOLINI GF BERTONI S MEDA L BALBONI R CORNI F FRABBONI S OTTAVIANI G TONINI R PARA AF
Citation: Gf. Cerofolini et al., GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 132-136
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