Authors: HANGLEITER A FRANKOWSKY G HARLE V SCHOLZ F

Citation: A. Hangleiter et al., OPTICAL GAIN IN THE NITRIDES - ARE THERE DIFFERENCES TO OTHER III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 201-206

Authors: OTTENWALDER D FRANKOWSKY G GFRORER O HANGLEITER A SCHOLZ F

Citation: D. Ottenwalder et al., CONTROL OF MONOLAYER TERRACE FORMATION IN SELECTIVE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 695-699

Authors: FRANKOWSKY G STEUBER F HARLE V SCHOLZ F HANGLEITER A

Citation: G. Frankowsky et al., OPTICAL GAIN IN GAINN GAN HETEROSTRUCTURES, Applied physics letters, 68(26), 1996, pp. 3746-3748

Authors: SCHOLZ F OTTENWALDER D ECKEL M WILD M FRANKOWSKY G WACKER T HANGLEITER A

Citation: F. Scholz et al., SELECTIVE-AREA EPITAXY OF GAINAS USING CONVENTIONAL AND NOVEL GROUP-III PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 242-248

Authors: ZIEGER K STAUSS P FRANKOWSKY G HANGLEITER A SCHOLZ F SPITZER J

Citation: K. Zieger et al., INVESTIGATION OF STRAIN EFFECTS IN SELECTIVELY GROWN GAAS ON SI, Journal of crystal growth, 145(1-4), 1994, pp. 345-352

Authors: ECKEL M OTTENWALDER D SCHOLZ F FRANKOWSKY G WACKER T HANGLEITER A

Citation: M. Eckel et al., IMPROVED COMPOSITION HOMOGENEITY DURING SELECTIVE-AREA EPITAXY OF GAINAS USING A NOVEL IN PRECURSOR, Applied physics letters, 64(7), 1994, pp. 854-856