Authors:
HANGLEITER A
FRANKOWSKY G
HARLE V
SCHOLZ F
Citation: A. Hangleiter et al., OPTICAL GAIN IN THE NITRIDES - ARE THERE DIFFERENCES TO OTHER III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 201-206
Authors:
SCHOLZ F
OTTENWALDER D
ECKEL M
WILD M
FRANKOWSKY G
WACKER T
HANGLEITER A
Citation: F. Scholz et al., SELECTIVE-AREA EPITAXY OF GAINAS USING CONVENTIONAL AND NOVEL GROUP-III PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 242-248
Authors:
ECKEL M
OTTENWALDER D
SCHOLZ F
FRANKOWSKY G
WACKER T
HANGLEITER A
Citation: M. Eckel et al., IMPROVED COMPOSITION HOMOGENEITY DURING SELECTIVE-AREA EPITAXY OF GAINAS USING A NOVEL IN PRECURSOR, Applied physics letters, 64(7), 1994, pp. 854-856