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Results: 1-21 |
Results: 21
APPLICATION OF IN-SITU REFLECTANCE MONITORING TO MOLECULAR-BEAM EPITAXY OF VERTICAL-CAVITY STRUCTURES
Authors: KLEM JF BREILAND WG FRITZ IJ DRUMMOND TJ LEE SR
Citation: Jf. Klem et al., APPLICATION OF IN-SITU REFLECTANCE MONITORING TO MOLECULAR-BEAM EPITAXY OF VERTICAL-CAVITY STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1498-1501
SEMICONDUCTOR CHARACTERIZATION BY A NEW CONTACTLESS ELECTROREFLECTANCE TECHNIQUE EMPLOYING SURFACE ACOUSTIC-WAVES
Authors: FRITZ IJ BRENNAN TM
Citation: Ij. Fritz et Tm. Brennan, SEMICONDUCTOR CHARACTERIZATION BY A NEW CONTACTLESS ELECTROREFLECTANCE TECHNIQUE EMPLOYING SURFACE ACOUSTIC-WAVES, Semiconductor science and technology, 12(1), 1997, pp. 19-21
DISLOCATION IMAGING OF AN INALGAAS OPTOELECTRONIC MODULATOR USING IBICC
Authors: SCHONE H BREESE MBH LEE SR BRIGGS RD CASALNUOVO SA DOYLE BL DRUMMOND TJ FRITZ IJ HAFICH MJ VAWTER GA
Citation: H. Schone et al., DISLOCATION IMAGING OF AN INALGAAS OPTOELECTRONIC MODULATOR USING IBICC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 551-556
NEAR-INFRARED SPECTROSCOPY WITH A DISPERSIVE WAVE-GUIDE DEVICE
Authors: STALLARD BR ROWE RK HOWARD AJ HADLEY GR VAWTER GA WENDT JR FRITZ IJ
Citation: Br. Stallard et al., NEAR-INFRARED SPECTROSCOPY WITH A DISPERSIVE WAVE-GUIDE DEVICE, Applied spectroscopy, 51(6), 1997, pp. 880-882
ELECTRIC-FIELD-INDEPENDENT BAND-GAP SUPERPOSITIONING AT 1.3-MU-M IN AN INGAAS-INALAS STRAINED-LAYER SUPERLATTICE
Authors: FRITZ IJ HAFICH MJ CASALNUOVO SA
Citation: Ij. Fritz et al., ELECTRIC-FIELD-INDEPENDENT BAND-GAP SUPERPOSITIONING AT 1.3-MU-M IN AN INGAAS-INALAS STRAINED-LAYER SUPERLATTICE, Applied physics letters, 71(16), 1997, pp. 2352-2354
TIME-RESOLVED CARRIER RECOMBINATION DYNAMICS OF 1.3-1.8-MU-M BROAD-BAND LIGHT-EMITTING DIODE STRUCTURES
Authors: WANG L LIN SY HAFICH MJ FRITZ IJ
Citation: L. Wang et al., TIME-RESOLVED CARRIER RECOMBINATION DYNAMICS OF 1.3-1.8-MU-M BROAD-BAND LIGHT-EMITTING DIODE STRUCTURES, Journal of applied physics, 80(12), 1996, pp. 6965-6971
X-RAY RECIPROCAL-SPACE MAPPING OF STRAIN RELAXATION AND TILTING IN LINEARLY GRADED INALAS BUFFERS
Authors: OLSEN JA HU EL LEE SR FRITZ IJ HOWARD AJ HAMMONS BE TSAO JY
Citation: Ja. Olsen et al., X-RAY RECIPROCAL-SPACE MAPPING OF STRAIN RELAXATION AND TILTING IN LINEARLY GRADED INALAS BUFFERS, Journal of applied physics, 79(7), 1996, pp. 3578-3584
VERTICAL-CAVITY OPTICAL MODULATOR FOR 1.32-MU-M GROWN ON A GRADED (INGAAL)AS BUFFER
Authors: FRITZ IJ DRUMMOND TJ LEE SR HAFICH MJ HOWARD AJ BRIGGS RD VAWTER GA ARMENDARIZ MG HIETALA VM
Citation: Ij. Fritz et al., VERTICAL-CAVITY OPTICAL MODULATOR FOR 1.32-MU-M GROWN ON A GRADED (INGAAL)AS BUFFER, Electronics Letters, 32(21), 1996, pp. 2010-2012
BROAD-BAND LIGHT-EMITTING DIODE FOR 1.4-2.0 MU-M USING VARIABLE-COMPOSITION INGAAS QUANTUM-WELLS
Authors: FRITZ IJ KLEM JF HAFICH MJ HOWARD AJ HJALMARSON HP
Citation: Ij. Fritz et al., BROAD-BAND LIGHT-EMITTING DIODE FOR 1.4-2.0 MU-M USING VARIABLE-COMPOSITION INGAAS QUANTUM-WELLS, IEEE photonics technology letters, 7(11), 1995, pp. 1270-1272
DIGITAL ALLOY ALASSB ALGAASSB DISTRIBUTED BRAGG REFLECTORS LATTICE-MATCHED TO INP FOR 1.3-1.55-MU-M WAVELENGTH RANGE/
Authors: BLUM O FRITZ IJ DAWSON LR DRUMMOND TJ
Citation: O. Blum et al., DIGITAL ALLOY ALASSB ALGAASSB DISTRIBUTED BRAGG REFLECTORS LATTICE-MATCHED TO INP FOR 1.3-1.55-MU-M WAVELENGTH RANGE/, Electronics Letters, 31(15), 1995, pp. 1247-1248
ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS
Authors: FRITZ IJ DRUMMOND TJ
Citation: Ij. Fritz et Tj. Drummond, ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS, Electronics Letters, 31(1), 1995, pp. 68-69
GRADED-COMPOSITION BUFFER LAYERS USING DIGITAL ALGAASSB ALLOYS
Authors: FRITZ IJ DAWSON LR OLSEN JA HOWARD AJ
Citation: Ij. Fritz et al., GRADED-COMPOSITION BUFFER LAYERS USING DIGITAL ALGAASSB ALLOYS, Applied physics letters, 67(16), 1995, pp. 2320-2322
HIGHLY REFLECTIVE, LONG-WAVELENGTH ALASSB GAASSB DISTRIBUTED-BRAGG-REFLECTOR GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES/
Authors: BLUM O FRITZ IJ DAWSON LR HOWARD AJ HEADLEY TJ KLEM JF DRUMMOND TJ
Citation: O. Blum et al., HIGHLY REFLECTIVE, LONG-WAVELENGTH ALASSB GAASSB DISTRIBUTED-BRAGG-REFLECTOR GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES/, Applied physics letters, 66(3), 1995, pp. 329-331
NOVEL PSEUDOALLOY APPROACH TO EPITAXIAL-GROWTH OF COMPLEX INGAALAS MULTILAYER STRUCTURES
Authors: FRITZ IJ KLEM JF HAFICH MJ HOWARD AJ
Citation: Ij. Fritz et al., NOVEL PSEUDOALLOY APPROACH TO EPITAXIAL-GROWTH OF COMPLEX INGAALAS MULTILAYER STRUCTURES, Applied physics letters, 66(21), 1995, pp. 2825-2827
INGAAS GAAS MULTIPLE STRAINED-LAYER STRUCTURE GROWN ON A LATTICE-MATCHED INGAAS SUBSTRATE WAFER/
Authors: FRITZ IJ KLEM JF SCHIRBER JE OLSEN JA BONNER WA
Citation: Ij. Fritz et al., INGAAS GAAS MULTIPLE STRAINED-LAYER STRUCTURE GROWN ON A LATTICE-MATCHED INGAAS SUBSTRATE WAFER/, Applied physics letters, 66(15), 1995, pp. 1957-1959
MOLECULAR-BEAM EPITAXY-GROWN ALASSB GAASSB DISTRIBUTED-BRAGG-REFLECTOR ON INP SUBSTRATE OPERATING NEAR 1.55-MU-M/
Authors: BLUM O FRITZ IJ DAWSON LR HOWARD AJ HEADLEY TJ OLSEN JA KLEM JF DRUMMOND TJ
Citation: O. Blum et al., MOLECULAR-BEAM EPITAXY-GROWN ALASSB GAASSB DISTRIBUTED-BRAGG-REFLECTOR ON INP SUBSTRATE OPERATING NEAR 1.55-MU-M/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1122-1124
MOLECULAR-BEAM EPITAXY-GROWN III-V STRAIN RELAXED BUFFER LAYERS AND SUPERLATTICES CHARACTERIZED BY ATOMIC-FORCE MICROSCOPY
Authors: HOWARD AJ FRITZ IJ DRUMMOND TJ OLSEN JA HAMMONS BE KURTZ SR BRENNAN TM
Citation: Aj. Howard et al., MOLECULAR-BEAM EPITAXY-GROWN III-V STRAIN RELAXED BUFFER LAYERS AND SUPERLATTICES CHARACTERIZED BY ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1003-1008
STRAINED-LAYER-SUPERLATTICE TECHNOLOGY FOR VERTICAL-CAVITY OPTOELECTRONIC MODULATORS AT NEAR-INFRARED WAVELENGTHS
Authors: FRITZ IJ OLSEN JA HOWARD AJ BRENNAN TM HAMMONS BE VAWTER GA
Citation: Ij. Fritz et al., STRAINED-LAYER-SUPERLATTICE TECHNOLOGY FOR VERTICAL-CAVITY OPTOELECTRONIC MODULATORS AT NEAR-INFRARED WAVELENGTHS, IEEE journal of quantum electronics, 30(2), 1994, pp. 452-458
INGAP ALINGAP QUANTUM-WELL SURFACE NORMAL MODULATORS FOR VISIBLE WAVELENGTHS/
Authors: BLUM O FRITZ IJ SHUL RJ SCHNEIDER RP HOWARD AJ
Citation: O. Blum et al., INGAP ALINGAP QUANTUM-WELL SURFACE NORMAL MODULATORS FOR VISIBLE WAVELENGTHS/, Electronics Letters, 30(22), 1994, pp. 1885-1887
ELECTRIC-FIELD-DEPENDENT ELECTROREFLECTANCE SPECTRA OF VISIBLE-BAND-GAP (INALGA)P QUANTUM-WELL STRUCTURES
Authors: FRITZ IJ BLUM O SCHNEIDER RP HOWARD AJ FOLLSTAEDT DM
Citation: Ij. Fritz et al., ELECTRIC-FIELD-DEPENDENT ELECTROREFLECTANCE SPECTRA OF VISIBLE-BAND-GAP (INALGA)P QUANTUM-WELL STRUCTURES, Applied physics letters, 64(14), 1994, pp. 1824-1826
LOW-VOLTAGE VERTICAL-CAVITY TRANSMISSION MODULATOR FOR 1.06 MU-M
Authors: FRITZ IJ BRENNAN TM HAMMONS BE HOWARD AJ WOROBEY W VAWTER GA MYERS DR
Citation: Ij. Fritz et al., LOW-VOLTAGE VERTICAL-CAVITY TRANSMISSION MODULATOR FOR 1.06 MU-M, Applied physics letters, 63(4), 1993, pp. 494-496
Risultati: 1-21 |