Authors:
KIM BY
LIU IM
LUAN HF
GARDNER M
FULFORD J
KWONG DL
Citation: By. Kim et al., IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS(), Microelectronic engineering, 36(1-4), 1997, pp. 313-316
Authors:
CHOU AI
LAI K
KUMAR K
LEE JC
GARDNER M
FULFORD J
Citation: Ai. Chou et al., OPTIMIZATION OF GATE DOPANT CONCENTRATION AND MICROSTRUCTURE FOR IMPROVED ELECTRICAL AND RELIABILITY CHARACTERISTICS OF ULTRATHIN OXIDES AND N2O OXYNITRIDES, Applied physics letters, 69(7), 1996, pp. 934-936
Authors:
WRISTERS D
HAN LK
CHEN T
WANG HH
KWONG DL
ALLEN M
FULFORD J
Citation: D. Wristers et al., DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION, Applied physics letters, 68(15), 1996, pp. 2094-2096
Authors:
LAI K
CHEN WM
HAO MY
LEE J
GARDNER M
FULFORD J
Citation: K. Lai et al., TURN-AROUND EFFECTS OF STRESS-INDUCED LEAKAGE CURRENT OF ULTRATHIN N2O-ANNEALED OXIDES, Applied physics letters, 67(5), 1995, pp. 673-675
Authors:
HAO MY
CHEN WM
LAI K
LEE JC
GARDNER M
FULFORD J
Citation: My. Hao et al., CORRELATION OF DIELECTRIC-BREAKDOWN WITH HOLE TRANSPORT FOR ULTRATHINTHERMAL OXIDES AND N2O OXYNITRIDES, Applied physics letters, 66(9), 1995, pp. 1126-1128
Authors:
BHAT M
HAN LK
WRISTERS D
YAN J
KWONG DL
FULFORD J
Citation: M. Bhat et al., EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2, Applied physics letters, 66(10), 1995, pp. 1225-1227