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Results: 1-6 |
Results: 6

Authors: KIM BY LIU IM LUAN HF GARDNER M FULFORD J KWONG DL
Citation: By. Kim et al., IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS(), Microelectronic engineering, 36(1-4), 1997, pp. 313-316

Authors: CHOU AI LAI K KUMAR K LEE JC GARDNER M FULFORD J
Citation: Ai. Chou et al., OPTIMIZATION OF GATE DOPANT CONCENTRATION AND MICROSTRUCTURE FOR IMPROVED ELECTRICAL AND RELIABILITY CHARACTERISTICS OF ULTRATHIN OXIDES AND N2O OXYNITRIDES, Applied physics letters, 69(7), 1996, pp. 934-936

Authors: WRISTERS D HAN LK CHEN T WANG HH KWONG DL ALLEN M FULFORD J
Citation: D. Wristers et al., DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION, Applied physics letters, 68(15), 1996, pp. 2094-2096

Authors: LAI K CHEN WM HAO MY LEE J GARDNER M FULFORD J
Citation: K. Lai et al., TURN-AROUND EFFECTS OF STRESS-INDUCED LEAKAGE CURRENT OF ULTRATHIN N2O-ANNEALED OXIDES, Applied physics letters, 67(5), 1995, pp. 673-675

Authors: HAO MY CHEN WM LAI K LEE JC GARDNER M FULFORD J
Citation: My. Hao et al., CORRELATION OF DIELECTRIC-BREAKDOWN WITH HOLE TRANSPORT FOR ULTRATHINTHERMAL OXIDES AND N2O OXYNITRIDES, Applied physics letters, 66(9), 1995, pp. 1126-1128

Authors: BHAT M HAN LK WRISTERS D YAN J KWONG DL FULFORD J
Citation: M. Bhat et al., EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2, Applied physics letters, 66(10), 1995, pp. 1225-1227
Risultati: 1-6 |