AAAAAA
Results:
1-7
|
Results: 7
Authors:
ELSTNER L
CONRAD E
ESCHRICH H
FUSSEL W
FLIETNER H
Citation: L. Elstner et al., HETEROJUNCTIONS IN PHOTOVOLTAIC APPLICATIONS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 79-90
Authors:
FLIETNER H
FUSSEL W
SINH ND
ANGERMANN H
Citation: H. Flietner et al., DENSITY-OF-STATES AND RELAXATION SPECTRA OF ETCHED, H-TERMINATED AND NATURALLY OXIDIZED SI-SURFACES AND THE ACCOMPANIED DEFECTS, Applied surface science, 104, 1996, pp. 342-348
Authors:
FUSSEL W
SCHMIDT M
ANGERMANN H
MENDE G
FLIETNER H
Citation: W. Fussel et al., DEFECTS AT THE SI SIO2 INTERFACE - THEIR NATURE AND BEHAVIOR IN TECHNOLOGICAL PROCESSES AND STRESS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 177-183
Authors:
ANGERMANN H
KLIEFOTH K
FUSSEL W
FLIETNER H
Citation: H. Angermann et al., DEFECT GENERATION AT SILICON SURFACES DURING ETCHING AND INITIAL-STAGE OF OXIDATION, Microelectronic engineering, 28(1-4), 1995, pp. 51-54
Authors:
LISOVSKII IP
LITOVCHENKO VG
LOZINSKII VB
FROLOV SI
FLIETNER H
FUSSEL W
SCHMIDT EG
Citation: Ip. Lisovskii et al., IR STUDY OF SHORT-RANGE AND LOCAL ORDER IN SIO2 AND SIOX FILMS, Journal of non-crystalline solids, 187, 1995, pp. 91-95
Authors:
FUSSEL W
HENRION W
SCHOLZ R
Citation: W. Fussel et al., STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF SIPOS PASSIVATION LAYERS, Microelectronic engineering, 22(1-4), 1993, pp. 355-358
Authors:
DITTRICH T
ANGERMANN H
FUSSEL W
FLIETNER H
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THEINITIAL OXIDATION IN AIR, Physica status solidi. a, Applied research, 140(2), 1993, pp. 463-470
Risultati:
1-7
|