ACNP - Italian Periodicals Catalogue

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Results: 10

MEASUREMENT OF CARRIER CONCENTRATION AT THE GAAS-SI INTERFACE IN GAASON SI BY RAMAN-SCATTERING

Authors: FUTAGI T TACHIKAWA A JONO A MORIKAWA Y AIGO T MORITANI A

Citation: T. Futagi et al., MEASUREMENT OF CARRIER CONCENTRATION AT THE GAAS-SI INTERFACE IN GAASON SI BY RAMAN-SCATTERING, JPN J A P 1, 35(12A), 1996, pp. 6013-6016

BLUE-LIGHT EMISSION FROM RAPID-THERMAL-OXIDIZED POROUS SILICON

Authors: MIMURA H FUTAGI T MATSUMOTO T NAKAMURA T KANEMITSU Y

Citation: H. Mimura et al., BLUE-LIGHT EMISSION FROM RAPID-THERMAL-OXIDIZED POROUS SILICON, JPN J A P 1, 33(1B), 1994, pp. 586-589

LARGE INDUCED ABSORPTION CHANGE IN POROUS SILICON AND ITS APPLICATIONTO OPTICAL LOGIC GATES

Authors: MATSUMOTO T HASEGAWA N TAMAKI T UEDA K FUTAGI T MIMURA H KANEMITSU Y

Citation: T. Matsumoto et al., LARGE INDUCED ABSORPTION CHANGE IN POROUS SILICON AND ITS APPLICATIONTO OPTICAL LOGIC GATES, JPN J A P 2, 33(1A), 1994, pp. 120000035-120000036

ORIGIN OF THE BLUE AND RED PHOTOLUMINESCENCE FROM OXIDIZED POROUS SILICON

Authors: KANEMITSU Y FUTAGI T MATSUMOTO T MIMURA H

Citation: Y. Kanemitsu et al., ORIGIN OF THE BLUE AND RED PHOTOLUMINESCENCE FROM OXIDIZED POROUS SILICON, Physical review. B, Condensed matter, 49(20), 1994, pp. 14732-14735

BLUE-GREEN LUMINESCENCE FROM POROUS SILICON-CARBIDE

Authors: MATSUMOTO T TAKAHASHI J TAMAKI T FUTAGI T MIMURA H KANEMITSU Y

Citation: T. Matsumoto et al., BLUE-GREEN LUMINESCENCE FROM POROUS SILICON-CARBIDE, Applied physics letters, 64(2), 1994, pp. 226-228

P-TYPE MU C-SIC PREPARED BY ECR PECVD USING TETRAMETHYLSILANE GAS

Authors: KATSUNO M FUTAGI T OHTA Y MIMURA H KITAMURA K

Citation: M. Katsuno et al., P-TYPE MU C-SIC PREPARED BY ECR PECVD USING TETRAMETHYLSILANE GAS, Applied surface science, 70-1, 1993, pp. 675-679

ULTRAFAST DECAY DYNAMICS OF LUMINESCENCE IN POROUS SILICON

Authors: MATSUMOTO T FUTAGI T MIMURA H KANEMITSU Y

Citation: T. Matsumoto et al., ULTRAFAST DECAY DYNAMICS OF LUMINESCENCE IN POROUS SILICON, Physical review. B, Condensed matter, 47(20), 1993, pp. 13876-13879

A VISIBLE LIGHT-EMITTING DIODE USING A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE

Authors: MIMURA H FUTAGI T MATSUMOTO T KANEMITSU Y

Citation: H. Mimura et al., A VISIBLE LIGHT-EMITTING DIODE USING A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE, Journal of non-crystalline solids, 166, 1993, pp. 949-952

ULTRAFAST ELECTRONIC RELAXATION PROCESSES IN POROUS SILICON

Authors: MATSUMOTO T WRIGHT OB FUTAGI T MIMURA H KANEMITSU Y

Citation: T. Matsumoto et al., ULTRAFAST ELECTRONIC RELAXATION PROCESSES IN POROUS SILICON, Journal of non-crystalline solids, 166, 1993, pp. 953-956

VISIBLE-LIGHT EMISSION FROM A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE

Authors: FUTAGI T MATSUMOTO T KATSUNO M OHTA Y MIMURA H KITAMURA K

Citation: T. Futagi et al., VISIBLE-LIGHT EMISSION FROM A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE, Applied physics letters, 63(9), 1993, pp. 1209-1210

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