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Results: 1-20 |
Results: 20
THEORETICAL-ANALYSIS OF WRITE ERRORS AND NUMBER OF STORED ELECTRONS FOR 10-NANOSCALE SI FLOATING-DOT MEMORY
Authors: USUKI T FUTATSUGI T NAKAJIMA A
Citation: T. Usuki et al., THEORETICAL-ANALYSIS OF WRITE ERRORS AND NUMBER OF STORED ELECTRONS FOR 10-NANOSCALE SI FLOATING-DOT MEMORY, JPN J A P 2, 37(6B), 1998, pp. 709-711
CHARACTERISTICS OF SPECTRAL-HOLE BURNING OF INAS SELF-ASSEMBLED QUANTUM DOTS
Authors: SUGIYAMA Y NAKATA Y MUTO S FUTATSUGI T YOKOYAMA N
Citation: Y. Sugiyama et al., CHARACTERISTICS OF SPECTRAL-HOLE BURNING OF INAS SELF-ASSEMBLED QUANTUM DOTS, IEEE journal of selected topics in quantum electronics, 4(5), 1998, pp. 880-885
MAGNETOPHOTOLUMINESCENCE IN HIGH MAGNETIC-FIELDS FROM INGAAS GAAS QUANTUM DOTS FORMED IN TETRAHEDRAL-SHAPED RECESSES/
Authors: UCHIDA K MIURA N SAKUMA Y AWANO Y FUTATSUGI T YOKOYAMA N
Citation: K. Uchida et al., MAGNETOPHOTOLUMINESCENCE IN HIGH MAGNETIC-FIELDS FROM INGAAS GAAS QUANTUM DOTS FORMED IN TETRAHEDRAL-SHAPED RECESSES/, Physica. B, Condensed matter, 251, 1998, pp. 247-251
SELF-ORGANIZED QUANTUM DOTS AND QUANTUM-DOT LASERS (INVITED)
Authors: ISHIKAWA H SHOJI H NAKATA Y MUKAI K SUGAWARA M EGAWA M OTSUKA N SUGIYAMA Y FUTATSUGI T YOKOYAMA N
Citation: H. Ishikawa et al., SELF-ORGANIZED QUANTUM DOTS AND QUANTUM-DOT LASERS (INVITED), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 794-800
MAGNETOPHOTOLUMINESCENCE STUDY OF QUANTUM DOTS FORMED ON TETRAHEDRAL-SHAPED RECESSES
Authors: SAKUMA Y AWANO Y FUTATSUGI T YOKOYAMA N UCHIDA K MIURA N
Citation: Y. Sakuma et al., MAGNETOPHOTOLUMINESCENCE STUDY OF QUANTUM DOTS FORMED ON TETRAHEDRAL-SHAPED RECESSES, Solid-state electronics, 42(7-8), 1998, pp. 1341-1347
MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF SN NANOCRYSTALS IN THIN, THERMALLY GROWN SIO2 LAYERS FORMED VIA LOW-ENERGY ION-IMPLANTATION
Authors: NAKAJIMA A FUTATSUGI T NAKAO H USUKI T HORIGUCHI N YOKOYAMA N
Citation: A. Nakajima et al., MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF SN NANOCRYSTALS IN THIN, THERMALLY GROWN SIO2 LAYERS FORMED VIA LOW-ENERGY ION-IMPLANTATION, Journal of applied physics, 84(3), 1998, pp. 1316-1320
COULOMB-BLOCKADE IN SB NANOCRYSTALS FORMED IN THIN, THERMALLY GROWN SIO2 LAYERS BY LOW-ENERGY ION-IMPLANTATION
Authors: NAKAJIMA A NAKAO H UENO H FUTATSUGI T YOKOYAMA N
Citation: A. Nakajima et al., COULOMB-BLOCKADE IN SB NANOCRYSTALS FORMED IN THIN, THERMALLY GROWN SIO2 LAYERS BY LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 73(8), 1998, pp. 1071-1073
PHONON-ASSISTED TUNNELING AND PEAK-TO-VALLEY RATIO IN A MAGNETICALLY CONFINED QUASI-ZERO-DIMENSIONAL INGAAS INALAS RESONANT-TUNNELING DIODE/
Authors: WIRNER C AWANO Y FUTATSUGI T YOKOYAMA N NAKAGAWA T BANDO H MUTO S OHNO M MIURA N
Citation: C. Wirner et al., PHONON-ASSISTED TUNNELING AND PEAK-TO-VALLEY RATIO IN A MAGNETICALLY CONFINED QUASI-ZERO-DIMENSIONAL INGAAS INALAS RESONANT-TUNNELING DIODE/, JPN J A P 1, 36(3B), 1997, pp. 1958-1960
DYNAMIC PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS EVALUATED BY CAPACITANCE-VOLTAGE MEASUREMENTS
Authors: HORIGUCHI N FUTATSUGI T NAKATA Y YOKOYAMA N
Citation: N. Horiguchi et al., DYNAMIC PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS EVALUATED BY CAPACITANCE-VOLTAGE MEASUREMENTS, JPN J A P 2, 36(9AB), 1997, pp. 1246-1249
NARROW PHOTOLUMINESCENCE LINE-WIDTH OF CLOSELY STACKED INAS SELF-ASSEMBLED QUANTUM-DOT STRUCTURES
Authors: SUGIYAMA Y NAKATA Y FUTATSUGI T SUGAWARA M AWANO Y YOKOYAMA N
Citation: Y. Sugiyama et al., NARROW PHOTOLUMINESCENCE LINE-WIDTH OF CLOSELY STACKED INAS SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, JPN J A P 2, 36(2A), 1997, pp. 158-161
FORMATION OF SB NANOCRYSTALS IN SIO2 FILM USING ION-IMPLANTATION FOLLOWED BY THERMAL ANNEALING
Authors: NAKAJIMA A FUTATSUGI T HORIGUCHI N YOKOYAMA N
Citation: A. Nakajima et al., FORMATION OF SB NANOCRYSTALS IN SIO2 FILM USING ION-IMPLANTATION FOLLOWED BY THERMAL ANNEALING, JPN J A P 2, 36(11B), 1997, pp. 1552-1554
SELF-ASSEMBLED STRUCTURES OF CLOSELY STACKED INAS ISLANDS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
Authors: NAKATA Y SUGIYAMA Y FUTATSUGI T YOKOYAMA N
Citation: Y. Nakata et al., SELF-ASSEMBLED STRUCTURES OF CLOSELY STACKED INAS ISLANDS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 713-719
OBSERVATION OF SPECTRAL HOLE-BURNING IN PHOTOCURRENT SPECTRUM OF INASSELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN PIN DIODE
Authors: SUGIYAMA Y NAKATA Y MUTO S HORIGUCHI N FUTATSUGI T AWANO Y YOKOYAMA N
Citation: Y. Sugiyama et al., OBSERVATION OF SPECTRAL HOLE-BURNING IN PHOTOCURRENT SPECTRUM OF INASSELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN PIN DIODE, Electronics Letters, 33(19), 1997, pp. 1655-1657
SI SINGLE-ELECTRON TUNNELING TRANSISTOR WITH NANOSCALE FLOATING DOT STACKED ON A COULOMB ISLAND BY SELF-ALIGNED PROCESS
Authors: NAKAJIMA A FUTATSUGI T KOSEMURA K FUKANO T YOKOYAMA N
Citation: A. Nakajima et al., SI SINGLE-ELECTRON TUNNELING TRANSISTOR WITH NANOSCALE FLOATING DOT STACKED ON A COULOMB ISLAND BY SELF-ALIGNED PROCESS, Applied physics letters, 71(3), 1997, pp. 353-355
FORMATION OF SN NANOCRYSTALS IN THIN SIO2 FILM USING LOW-ENERGY ION-IMPLANTATION
Authors: NAKAJIMA A FUTATSUGI T HORIGUCHI N YOKOYAMA N
Citation: A. Nakajima et al., FORMATION OF SN NANOCRYSTALS IN THIN SIO2 FILM USING LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 71(25), 1997, pp. 3652-3654
ELECTRON-TRANSPORT PROPERTIES THROUGH INAS SELF-ASSEMBLED QUANTUM DOTS IN MODULATION-DOPED STRUCTURES
Authors: HORIGUCHI N FUTATSUGI T NAKATA Y YOKOYAMA N
Citation: N. Horiguchi et al., ELECTRON-TRANSPORT PROPERTIES THROUGH INAS SELF-ASSEMBLED QUANTUM DOTS IN MODULATION-DOPED STRUCTURES, Applied physics letters, 70(17), 1997, pp. 2294-2296
ROOM-TEMPERATURE OPERATION OF SI SINGLE-ELECTRON MEMORY WITH SELF-ALIGNED FLOATING DOT GATE
Authors: NAKAJIMA A FUTATSUGI T KOSEMURA K FUKANO T YOKOYAMA N
Citation: A. Nakajima et al., ROOM-TEMPERATURE OPERATION OF SI SINGLE-ELECTRON MEMORY WITH SELF-ALIGNED FLOATING DOT GATE, Applied physics letters, 70(13), 1997, pp. 1742-1744
INTEGRITY EVALUATION OF SIOX FILM ON POLYETHYLENE TERAPTHALATE BY AE CHARACTERIZATION AND LASER MICROSCOPY
Authors: FUTATSUGI T OGAWA S TAKEMOTO M YANAKA MA TSUKAHARA Y
Citation: T. Futatsugi et al., INTEGRITY EVALUATION OF SIOX FILM ON POLYETHYLENE TERAPTHALATE BY AE CHARACTERIZATION AND LASER MICROSCOPY, NDT & E international, 29(5), 1996, pp. 307-316
OBSERVATION OF SINGLE-ELECTRON EFFECTS USING HEMT
Authors: FUTATSUGI T HORIGUCHI N SAITO M YOKOYAMA N
Citation: T. Futatsugi et al., OBSERVATION OF SINGLE-ELECTRON EFFECTS USING HEMT, Physica. B, Condensed matter, 227(1-4), 1996, pp. 109-111
COUPLING BETWEEN ONE-DIMENSIONAL STATES IN A QUANTUM POINT-CONTACT AND AN ELECTRON WAVE-GUIDE
Authors: SAITO M USUKI T OKADA M FUTATSUGI T KIEHL RA YOKOYAMA N
Citation: M. Saito et al., COUPLING BETWEEN ONE-DIMENSIONAL STATES IN A QUANTUM POINT-CONTACT AND AN ELECTRON WAVE-GUIDE, Applied physics letters, 65(24), 1994, pp. 3087-3089
Risultati: 1-20 |