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Results: 1-8 |
Results: 8
Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes
Authors: Zhang, RP Adivarahan, V Wang, HM Fareed, Q Kuokstis, E Chitnis, A Shatalov, M Yang, JW Simin, G Khan, MA Shur, M Gaska, R
Citation: Rp. Zhang et al., Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes, JPN J A P 2, 40(9AB), 2001, pp. L921-L924
Pulsed atomic layer epitaxy of quaternary AlInGaN layers
Authors: Zhang, J Kuokstis, E Fareed, Q Wang, H Yang, J Simin, G Khan, MA Gaska, R Shur, M
Citation: J. Zhang et al., Pulsed atomic layer epitaxy of quaternary AlInGaN layers, APPL PHYS L, 79(7), 2001, pp. 925-927
Band-edge luminescence in quaternary AllnGaN light-emitting diodes
Authors: Shatalov, M Chitnis, A Adivarahan, V Lunev, A Zhang, J Yang, JW Fareed, Q Simin, G Zakheim, A Khan, MA Gaska, R Shur, MS
Citation: M. Shatalov et al., Band-edge luminescence in quaternary AllnGaN light-emitting diodes, APPL PHYS L, 78(6), 2001, pp. 817-819
Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition
Authors: Chung, SH Lachab, M Wang, T Lacroix, Y Basak, D Fareed, Q Kawakami, Y Nishino, K Sakai, S
Citation: Sh. Chung et al., Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition, JPN J A P 1, 39(8), 2000, pp. 4749-4750
Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma
Authors: Basak, D Fareed, Q Nishino, K Sakai, S
Citation: D. Basak et al., Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma, J VAC SCI B, 18(5), 2000, pp. 2491-2494
Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process
Authors: Lachab, M Nozaki, M Wang, J Ishikawa, Y Fareed, Q Wang, T Nishikawa, T Nishino, K Sakai, S
Citation: M. Lachab et al., Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process, J APPL PHYS, 87(3), 2000, pp. 1374-1378
Reactive ion etching of GaN and AlxGa1-xN using Cl-2/CH4/Ar plasma
Authors: Basak, D Yamashita, K Sugahara, T Fareed, Q Nakagawa, D Nishino, K Sakai, S
Citation: D. Basak et al., Reactive ion etching of GaN and AlxGa1-xN using Cl-2/CH4/Ar plasma, JPN J A P 1, 38(4B), 1999, pp. 2646-2651
Selective etching of GaN over Al(x)Ga1-xN using reactive ion plasma of Cl-2/CH4/Ar gas mixture
Authors: Basak, D Yamashita, K Sugahara, T Nakagawa, D Fareed, Q Nishino, K Sakai, S
Citation: D. Basak et al., Selective etching of GaN over Al(x)Ga1-xN using reactive ion plasma of Cl-2/CH4/Ar gas mixture, JPN J A P 1, 38(1A), 1999, pp. 42-43
Risultati: 1-8 |