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Results:
1-14
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Results: 14
Authors:
Zehnder, U
Weimar, A
Strauss, U
Fehrer, M
Hahn, B
Lugauer, HJ
Harle, V
Citation: U. Zehnder et al., Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates, J CRYST GR, 230(3-4), 2001, pp. 497-502
Authors:
Baur, J
Strauss, U
Bruederl, G
Eisert, D
Oberschmid, R
Hahn, B
Lugauer, HJ
Bader, S
Zehnder, U
Fehrer, M
Harle, V
Citation: J. Baur et al., Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC, J CRYST GR, 230(3-4), 2001, pp. 507-511
Authors:
Klude, M
Fehrer, M
Hommel, D
Citation: M. Klude et al., High-power operation of ZnSe-based cw-laser diodes, PHYS ST S-A, 180(1), 2000, pp. 21-26
Authors:
Stemmer, J
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Aderhold, J
Sanchez, AM
Pacheco, FJ
Molina, SI
Fehrer, M
Hommel, D
Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Authors:
Klude, M
Fehrer, M
Grossmann, V
Hommel, D
Citation: M. Klude et al., Influence of driving conditions on the stability of ZnSe-based cw-laser diodes, J CRYST GR, 214, 2000, pp. 1040-1044
Authors:
Legge, M
Bacher, G
Forchel, A
Klude, M
Fehrer, M
Hommel, D
Citation: M. Legge et al., Low threshold II-VI laser diodes with transversal and longitudinal single-mode emission, J CRYST GR, 214, 2000, pp. 1045-1048
Authors:
Wenisch, H
Fehrer, M
Klude, M
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes, J CRYST GR, 214, 2000, pp. 1075-1079
Authors:
Wenisch, H
Behringer, M
Fehrer, M
Klude, M
Isemann, A
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Device properties of homo- and heteroepitaxial ZnSe-based laser diodes, JPN J A P 1, 38(4B), 1999, pp. 2590-2597
Authors:
Strauf, S
Michler, P
Gutowski, J
Birkle, U
Fehrer, M
Einfeldt, S
Hommel, D
Citation: S. Strauf et al., Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaNgrown by MBE, PHYS ST S-B, 216(1), 1999, pp. 557-560
Authors:
Kirchner, V
Fehrer, M
Figge, S
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
Citation: V. Kirchner et al., Correlations between structural, electrical and optical properties of GaN layers grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 659-662
Authors:
Ebel, R
Fehrer, M
Figge, S
Einfeldt, S
Selke, H
Hommel, D
Citation: R. Ebel et al., Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 433-436
Authors:
Wenisch, H
Fehrer, M
Klude, M
Isemann, A
Grossmann, V
Heinke, H
Ohkawa, K
Hommel, D
Prokesch, M
Rinas, U
Hartmann, H
Citation: H. Wenisch et al., Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates, J CRYST GR, 202, 1999, pp. 933-937
Authors:
Lilienkamp, T
Michler, P
Ebeling, W
Gutowski, J
Behringer, M
Fehrer, M
Hommel, D
Citation: T. Lilienkamp et al., Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures, J APPL PHYS, 86(8), 1999, pp. 4360-4364
Authors:
Legge, M
Bacher, G
Forchel, A
Klude, M
Fehrer, M
Hommel, D
Citation: M. Legge et al., Green emitting DFB laser diodes based on ZnSe, ELECTR LETT, 35(9), 1999, pp. 718-720
Risultati:
1-14
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