Authors: Sokolich, M Fields, CH Madhav, M

Citation: M. Sokolich et al., Submicron AlInAs/InGaAs HBT with 160 GHz f(T) at 1 mA collector current, IEEE ELEC D, 22(1), 2001, pp. 8-10

Authors: Thomas, S Fields, CH Madhav, M

Citation: S. Thomas et al., RF modeling approach to determining end-of-life reliability for InP-based HBTs, MICROEL REL, 41(8), 2001, pp. 1129-1135

Authors: Sokolich, M Fields, CH Thomas, S Shi, BQ Boegeman, YK Montes, M Martinez, R Kramer, AR Madhav, M

Citation: M. Sokolich et al., A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology, IEEE J SOLI, 36(9), 2001, pp. 1328-1334

Authors: Broekaert, TPE Ng, WW Jensen, JF Yap, D Persechini, DL Bourgholtzer, S Fields, CH Brown-Boegeman, YK Shi, BQ Walden, RH

Citation: Tpe. Broekaert et al., InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion, IEEE J SOLI, 36(9), 2001, pp. 1335-1342

Authors: Thomas, S Chow, DH Kizilogu, K Fields, CH Madhav, M Arthur, A

Citation: S. Thomas et al., Planar integration of heterojunction bipolar transistors and resonant tunneling diodes, J VAC SCI B, 18(5), 2000, pp. 2452-2456

Authors: Fields, CH Thomas, S

Citation: Ch. Fields et S. Thomas, Application of silicon-based process simulation tools to the fabrication of heterojunction bipolar transistors, IEEE DEVICE, 47(10), 2000, pp. 1973-1979