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Results: 1-7 |
Results: 7
Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates
Authors: Katona, TM Craven, MD Fini, PT Speck, JS DenBaars, SP
Citation: Tm. Katona et al., Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates, APPL PHYS L, 79(18), 2001, pp. 2907-2909
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Authors: Ibbetson, JP Fini, PT Ness, KD DenBaars, SP Speck, JS Mishra, UK
Citation: Jp. Ibbetson et al., Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, APPL PHYS L, 77(2), 2000, pp. 250-252
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
Authors: Keller, S Parish, G Fini, PT Heikman, S Chen, CH Zhang, N DenBaars, SP Mishra, UK Wu, YF
Citation: S. Keller et al., Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures, J APPL PHYS, 86(10), 1999, pp. 5850-5857
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
Authors: Rosner, SJ Girolami, G Marchand, H Fini, PT Ibbetson, JP Zhao, L Keller, S Mishra, UK DenBaars, SP Speck, JS
Citation: Sj. Rosner et al., Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride, APPL PHYS L, 74(14), 1999, pp. 2035-2037
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Authors: Chichibu, SF Marchand, H Minsky, MS Keller, S Fini, PT Ibbetson, JP Fleischer, SB Speck, JS Bowers, JE Hu, E Mishra, UK DenBaars, SP Deguchi, T Soto, T Nakamura, S
Citation: Sf. Chichibu et al., Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth, APPL PHYS L, 74(10), 1999, pp. 1460-1462
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
Authors: Marchand, H Ibbetson, JP Fini, PT Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: H. Marchand et al., Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 328-332
Risultati: 1-7 |