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Results:
1-23
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Results: 23
Authors:
Filippetti, A
Fiorentini, V
Citation: A. Filippetti et V. Fiorentini, Stress and reconstruction on (001) transition-metal surfaces, COMP MAT SC, 20(3-4), 2001, pp. 423-428
Authors:
Fiorentini, V
Meloni, F
Ruggerone, P
Citation: V. Fiorentini et al., Selected papers of the Ninth International Workshop on Computational Materials Science - Villasimius, Sardinia, Italy - 10-13 September, 1999 - Preface, COMP MAT SC, 20(3-4), 2001, pp. VII-VII
Authors:
Bernardini, F
Fiorentini, V
Citation: F. Bernardini et V. Fiorentini, Nonlinear macroscopic polarization in III-V nitride alloys - art. no. 085207, PHYS REV B, 6408(8), 2001, pp. 5207
Authors:
Zoroddu, A
Bernardini, F
Ruggerone, P
Fiorentini, V
Citation: A. Zoroddu et al., First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory - art. no. 045208, PHYS REV B, 6404(4), 2001, pp. 5208
Authors:
Bernardini, F
Fiorentini, V
Vanderbilt, D
Citation: F. Bernardini et al., Accurate calculation of polarization-related quantities in semiconductors - art. no. 193201, PHYS REV B, 6319(19), 2001, pp. 3201
Authors:
Trudu, F
Fiorentini, V
Ruggerone, P
Hansen, U
Citation: F. Trudu et al., Roughening of close-packed singular surfaces - art. no. 153402, PHYS REV B, 6315(15), 2001, pp. 3402
Authors:
Carbonaro, CM
Fiorentini, V
Bernardini, F
Citation: Cm. Carbonaro et al., Proof of the thermodynamical stability of the E ' center in SiO2, PHYS REV L, 86(14), 2001, pp. 3064-3067
Authors:
Methfessel, M
Fiorentini, V
Oppo, S
Citation: M. Methfessel et al., Connection between charge transfer and alloying core-level shifts based ondensity-functional calculations, PHYS REV B, 61(8), 2000, pp. 5229-5236
Authors:
Filippetti, A
Fiorentini, V
Citation: A. Filippetti et V. Fiorentini, Theory and applications of the stress density, PHYS REV B, 61(12), 2000, pp. 8433-8442
Authors:
Bernardini, F
Fiorentini, V
Citation: F. Bernardini et V. Fiorentini, Polarization fields in nitride nanostructures: 10 points to think about, APPL SURF S, 166(1-4), 2000, pp. 23-29
Authors:
Bernardini, F
Peressi, M
Fiorentini, V
Citation: F. Bernardini et al., Band offsets and stability of BeTe/ZnSe (100) heterojunctions, PHYS REV B, 62(24), 2000, pp. R16302-R16305
Authors:
Bernardini, F
Fiorentini, V
Citation: F. Bernardini et V. Fiorentini, Incorporation, diffusion, and electrical activity of Li in GaN, PHYS REV B, 61(19), 2000, pp. 12598-12601
Authors:
Di Carlo, A
Della Sala, F
Lugli, P
Fiorentini, V
Bernardini, F
Citation: A. Di Carlo et al., Doping screening of polarization fields in nitride heterostructures, APPL PHYS L, 76(26), 2000, pp. 3950-3952
Authors:
Bernardini, F
Fiorentini, V
Citation: F. Bernardini et V. Fiorentini, Spontaneous versus piezoelectric polarization in III-V nitrides: Conceptual aspects and practical consequences, PHYS ST S-B, 216(1), 1999, pp. 391-398
Authors:
Hansen, U
Vogl, P
Fiorentini, V
Citation: U. Hansen et al., Quasiharmonic versus exact surface free energies of Al: A systematic studyemploying a classical interatomic potential, PHYS REV B, 60(7), 1999, pp. 5055-5064
Authors:
Filippetti, A
Fiorentini, V
Citation: A. Filippetti et V. Fiorentini, Faceting and stress of missing-row reconstructed transition-metal (110) surfaces, PHYS REV B, 60(20), 1999, pp. 14366-14371
Authors:
Fiorentini, V
Bernardini, F
Della Sala, F
Di Carlo, A
Lugli, P
Citation: V. Fiorentini et al., Effects of macroscopic polarization in III-V nitride multiple quantum wells, PHYS REV B, 60(12), 1999, pp. 8849-8858
Authors:
Hansen, U
Vogl, P
Fiorentini, V
Citation: U. Hansen et al., Atomistic modeling of large-scale metal film growth fronts, PHYS REV B, 59(12), 1999, pp. R7856-R7859
Authors:
Filippetti, A
Fiorentini, V
Cappellini, G
Bosin, A
Citation: A. Filippetti et al., Anomalous relaxations and chemical trends at III-V semiconductor nitride nonpolar surfaces, PHYS REV B, 59(12), 1999, pp. 8026-8031
Authors:
Fara, A
Bernardini, F
Fiorentini, V
Citation: A. Fara et al., Theoretical evidence for the semi-insulating character of AlN, J APPL PHYS, 85(3), 1999, pp. 2001-2003
Authors:
Della Sala, F
Di Carlo, A
Lugli, P
Bernardini, F
Fiorentini, V
Scholz, R
Jancu, JM
Citation: F. Della Sala et al., Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures, APPL PHYS L, 74(14), 1999, pp. 2002-2004
Authors:
Bernardini, F
Fiorentini, V
Citation: F. Bernardini et V. Fiorentini, Electronic dielectric constants of insulators calculated by the polarization method, PHYS REV B, 58(23), 1998, pp. 15292-15295
Authors:
Filippetti, A
Fiorentini, V
Cappellini, G
Bosin, A
Citation: A. Filippetti et al., Ionicity and relaxation anomalies at III-V nitride surfaces, PHYS ST S-A, 170(2), 1998, pp. 265-269
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