Authors: Fjeldly, TA Deng, YQ Shur, MS Hjalmarson, HP Muyshondt, A Ytterdal, T

Citation: Ta. Fjeldly et al., Modeling of high-dose-rate transient ionizing radiation effects in bipolardevices, IEEE NUCL S, 48(5), 2001, pp. 1721-1730

Authors: Wang, L Fjeldly, TA Iniguez, B Slade, HC Shur, M

Citation: L. Wang et al., Self-heating and kink effects in a-Si : H thin film transistors, IEEE DEVICE, 47(2), 2000, pp. 387-397

Authors: Iniguez, B Xu, Z Fjeldly, TA Shur, MS

Citation: B. Iniguez et al., Unified model for short-channel poly-Si TFTs, SOL ST ELEC, 43(10), 1999, pp. 1821-1831

Authors: Gaska, R Shur, MS Fjeldly, TA Bykhovski, AD

Citation: R. Gaska et al., Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications, J APPL PHYS, 85(5), 1999, pp. 3009-3011

Authors: Ytterdal, T Fjeldly, TA Shur, MS Baier, SM Lucero, R

Citation: T. Ytterdal et al., Enhanced heterostructure field effect transistor CAD model suitable for simulation of mixed mode circuits, IEEE DEVICE, 46(8), 1999, pp. 1577-1588

Authors: Shen, H Xu, Z Dalager, B Kristiansen, V Strom, O Shur, MS Fjeldly, TA Lu, JQ Ytterdal, T

Citation: H. Shen et al., Conducting laboratory experiments over the Internet, IEEE EDUCAT, 42(3), 1999, pp. 180-185