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Results: 1-25 | 26-28 |
Results: 26-28/28
The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films
Authors: Vanheusden, K Fleetwood, DM Shaneyfelt, MR Draper, BL Schwank, JR
Citation: K. Vanheusden et al., The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films, IEEE NUCL S, 45(6), 1998, pp. 2391-2397
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
Authors: Sexton, FW Fleetwood, DM Shaneyfelt, MR Dodd, PE Hash, GL Schanwald, LP Loemker, RA Krisch, KS Green, ML Weir, BE Silverman, PJ
Citation: Fw. Sexton et al., Precursor ion damage and angular dependence of single event gate rupture in thin oxides, IEEE NUCL S, 45(6), 1998, pp. 2509-2518
Moderated degradation enhancement of lateral pnp transistors due to measurement bias
Authors: Witczak, SC Schrimpf, RD Barnaby, HJ Lacoe, RC Mayer, DC Galloway, KF Pease, RL Fleetwood, DM
Citation: Sc. Witczak et al., Moderated degradation enhancement of lateral pnp transistors due to measurement bias, IEEE NUCL S, 45(6), 1998, pp. 2644-2648
Risultati: 1-25 | 26-28 |