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Results:
1-9
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Results: 9
Authors:
Fornari, R
Bosi, M
Armani, N
Attolini, G
Ferrari, C
Pelosi, C
Salviati, G
Citation: R. Fornari et al., Hydride vapour phase epitaxy growth and characterisation of GaN layers, MAT SCI E B, 79(2), 2001, pp. 159-164
Authors:
Fornari, R
Bosi, M
Bersani, D
Attolini, G
Lottici, PP
Pelosi, C
Citation: R. Fornari et al., Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy, SEMIC SCI T, 16(9), 2001, pp. 776-782
Authors:
Pelfer, PG
Dubecky, F
Fornari, R
Pikna, M
Gombia, E
Darmo, J
Krempasky, M
Sekacova, M
Citation: Pg. Pelfer et al., Present status and perspectives of the radiation detectors based on InP materials, NUCL INST A, 458(1-2), 2001, pp. 400-405
Authors:
Attolini, G
Carra, S
Di Muzio, F
Fornari, R
Masi, M
Pelosi, C
Citation: G. Attolini et al., A vertical reactor for deposition of gallium nitride, MATER CH PH, 66(2-3), 2000, pp. 213-218
Authors:
Fornari, R
Paorici, C
Zagari, A
Citation: R. Fornari et al., Special issue - Proceedings of the Italian Crystal Growth Symposium, Naples, Italy, 7-9 September 1999, MATER CH PH, 66(2-3), 2000, pp. VII-VII
Authors:
Fornari, R
Gorog, T
Jimenez, J
De la Puente, E
Avella, M
Grant, I
Brozel, M
Nicholls, M
Citation: R. Fornari et al., Uniformity of semi-insulating InP wafers obtained by Fe diffusion, J APPL PHYS, 88(9), 2000, pp. 5225-5229
Authors:
Fornari, R
Jimenez, J
Citation: R. Fornari et J. Jimenez, Semi-insulating InP substrates: Preparation, thermal treatment, physical properties and homogeneity, OPTOEL PROP, 9, 2000, pp. 67-129
Authors:
Fornari, R
Citation: R. Fornari, On the electrical activity of Fe in LEC indium phosphide, SEMIC SCI T, 14(3), 1999, pp. 246-250
Authors:
Mari, B
Hernandez, MA
Navarro, FJ
Fornari, R
Citation: B. Mari et al., Photoluminescence studies of neutron-transmutation-doped InP : Fe, NUCL INST B, 147(1-4), 1999, pp. 175-180
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1-9
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