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Results: 1-25 | 26-50 | 51-63 |
Results: 51-63/63
Transparent stacked organic light emitting devices. II. Device performanceand applications to displays
Authors: Gu, G Parthasarathy, G Tian, P Burrows, PE Forrest, SR
Citation: G. Gu et al., Transparent stacked organic light emitting devices. II. Device performanceand applications to displays, J APPL PHYS, 86(8), 1999, pp. 4076-4084
In0.53Ga0.47As/In0.52Al0.48As separate absorption, charge, and multiplication layer long wavelength avalanche photodiode
Authors: Dries, JC Thomson, KJ Forrest, SR
Citation: Jc. Dries et al., In0.53Ga0.47As/In0.52Al0.48As separate absorption, charge, and multiplication layer long wavelength avalanche photodiode, ELECTR LETT, 35(4), 1999, pp. 334-335
Making light of it (vol Dec, pg 1022, 1998)
Authors: Thompson, ME Burrows, PE Forrest, SR
Citation: Me. Thompson et al., Making light of it (vol Dec, pg 1022, 1998), CHEM IND L, (2), 1999, pp. 42-42
Tuning the color emission of thin film molecular organic light emitting devices by the solid state solvation effect
Authors: Bulovic, V Deshpande, R Thompson, ME Forrest, SR
Citation: V. Bulovic et al., Tuning the color emission of thin film molecular organic light emitting devices by the solid state solvation effect, CHEM P LETT, 308(3-4), 1999, pp. 317-322
White-light-emitting organic electroluminescent devices based on interlayer sequential energy transfer
Authors: Deshpande, RS Bulovic, V Forrest, SR
Citation: Rs. Deshpande et al., White-light-emitting organic electroluminescent devices based on interlayer sequential energy transfer, APPL PHYS L, 75(7), 1999, pp. 888-890
Very high-efficiency green organic light-emitting devices based on electrophosphorescence
Authors: Baldo, MA Lamansky, S Burrows, PE Thompson, ME Forrest, SR
Citation: Ma. Baldo et al., Very high-efficiency green organic light-emitting devices based on electrophosphorescence, APPL PHYS L, 75(1), 1999, pp. 4-6
Growth and characterization of small band gap (similar to 0.6 eV) InGaAsN layers on InP
Authors: Gokhale, MR Wei, J Wang, HS Forrest, SR
Citation: Mr. Gokhale et al., Growth and characterization of small band gap (similar to 0.6 eV) InGaAsN layers on InP, APPL PHYS L, 74(9), 1999, pp. 1287-1289
Optical properties of molecular organic semiconductor thin films under intense electrical excitation
Authors: Kozlov, VG Burrows, PE Parthasarathy, G Forrest, SR
Citation: Vg. Kozlov et al., Optical properties of molecular organic semiconductor thin films under intense electrical excitation, APPL PHYS L, 74(8), 1999, pp. 1057-1059
Improved energy transfer in electrophosphorescent devices
Authors: O'Brien, DF Baldo, MA Thompson, ME Forrest, SR
Citation: Df. O'Brien et al., Improved energy transfer in electrophosphorescent devices, APPL PHYS L, 74(3), 1999, pp. 442-444
A metal-free, full-color stacked organic light-emitting device
Authors: Gu, G Parthasarathy, G Forrest, SR
Citation: G. Gu et al., A metal-free, full-color stacked organic light-emitting device, APPL PHYS L, 74(2), 1999, pp. 305-307
A 2.0 mu m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
Authors: Dries, JC Gokhale, MR Forrest, SR
Citation: Jc. Dries et al., A 2.0 mu m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells, APPL PHYS L, 74(18), 1999, pp. 2581-2583
Electroluminescence in molecular materials
Authors: Sibley, S Thompson, ME Burrows, PE Forrest, SR
Citation: S. Sibley et al., Electroluminescence in molecular materials, MOD INORG C, 1999, pp. 29-54
Making light of it
Authors: Forrest, SR Burrows, PE Thompson, ME
Citation: Sr. Forrest et al., Making light of it, CHEM IND L, (24), 1998, pp. 1022-1026
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