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Results:
1-25
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Results: 25
Authors:
Rubini, S
Pelucchi, E
Lazzarino, M
Kumar, D
Franciosi, A
Berthod, C
Binggeli, N
Baldereschi, A
Citation: S. Rubini et al., Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307, PHYS REV B, 6323(23), 2001, pp. 5307
Authors:
Rubini, S
Milocco, E
Sorba, L
Pelucchi, E
Franciosi, A
Garulli, A
Parisini, A
Zhuang, Y
Bauer, G
Citation: S. Rubini et al., Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312, PHYS REV B, 6315(15), 2001, pp. 5312
Authors:
Giazotto, F
Pingue, P
Beltram, F
Lazzarino, M
Orani, D
Rubini, S
Franciosi, A
Citation: F. Giazotto et al., Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model - art. no. 216808, PHYS REV L, 8721(21), 2001, pp. 6808
Authors:
Bonanni, B
Orani, D
Lazzarino, M
Rubini, S
Franciosi, A
Citation: B. Bonanni et al., Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles, APPL PHYS L, 79(10), 2001, pp. 1462-1464
Authors:
Bonanni, B
Pelucchi, E
Rubini, S
Orani, D
Franciosi, A
Garulli, A
Parisini, A
Citation: B. Bonanni et al., Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures, APPL PHYS L, 78(4), 2001, pp. 434-436
Authors:
Giazotto, F
Cecchini, M
Pingue, P
Beltram, F
Lazzarino, M
Orani, D
Rubini, S
Franciosi, A
Citation: F. Giazotto et al., Reflectionless tunneling in planar Nb/GaAs hybrid junctions, APPL PHYS L, 78(12), 2001, pp. 1772-1774
Authors:
Pelucchi, E
Rubini, S
Bonanni, B
Franciosi, A
Peressi, M
Citation: E. Pelucchi et al., Band discontinuities in ZnMgSe/ZnCdSe(001) lattice-matched heterostructures, APPL PHYS L, 78(11), 2001, pp. 1574-1576
Authors:
Carlino, E
Sorba, L
Franciosi, A
Heun, S
Muller, BH
Citation: E. Carlino et al., Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux, PHIL MAG B, 80(5), 2000, pp. 1055-1069
Authors:
De Franceschi, S
Giazotto, F
Beltram, F
Sorba, L
Lazzarino, M
Franciosi, A
Citation: S. De Franceschi et al., Andreev reflection in engineered Al/Si/InxGa1-xAs(001) junctions, PHIL MAG B, 80(4), 2000, pp. 817-823
Authors:
De Nardis, A
Pellegrini, V
Colombelli, R
Beltram, F
Vanzetti, L
Franciosi, A
Krivorotov, IN
Bajaj, KK
Citation: A. De Nardis et al., Polaronic excitons in ZnxCd1-xSe/ZnSe quantum wells, PHYS REV B, 61(3), 2000, pp. 1700-1703
Authors:
Marinelli, C
Sorba, L
Lazzarino, M
Kumar, D
Pelucchi, E
Muller, BH
Orani, D
Rubini, S
Franciosi, A
De Franceshi, S
Beltran, F
Citation: C. Marinelli et al., Tunable Schottky barrier contacts to InxGa1-xAs, J VAC SCI B, 18(4), 2000, pp. 2119-2127
Authors:
Rubini, S
Bonanni, B
Pelucchi, E
Franciosi, A
Garulli, A
Parisini, A
Zhuang, Y
Bauer, G
Holy, V
Citation: S. Rubini et al., ZnSe/CdTe/ZnSe heterostructures, J VAC SCI B, 18(4), 2000, pp. 2263-2270
Authors:
Re, M
Carlino, E
Sorba, L
Franciosi, A
Muller, BH
Citation: M. Re et al., High resolution transmission electron microscopy to study very thin crystalline layers buried at an amorphous-crystalline interface, MICRON, 31(3), 2000, pp. 237-243
Authors:
Hierro, A
Kwon, D
Ringel, SA
Rubini, S
Pelucchi, E
Franciosi, A
Citation: A. Hierro et al., Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beamepitaxy, J APPL PHYS, 87(2), 2000, pp. 730-738
Authors:
Garcia, CP
De Nardis, A
Pellegrini, V
Jancu, JM
Beltram, F
Mueller, BH
Sorba, L
Franciosi, A
Citation: Cp. Garcia et al., 1.26 mu m intersubband transitions in In0.3Ga0.7As/AlAs quantum wells, APPL PHYS L, 77(23), 2000, pp. 3767-3769
Authors:
Calcagnile, L
Lomascolo, M
Cingolani, R
Sorba, L
Franciosi, A
Citation: L. Calcagnile et al., Cavity size and temperature dependence of stimulated emission in single Zn1-xCdxSe/ZnSe quantum-well lasers, SUPERLATT M, 25(1-2), 1999, pp. 357-360
Authors:
Schafer, J
Young, AP
Levin, TM
Brillson, LJ
Paggel, JJ
Vanzetti, L
Franciosi, A
Citation: J. Schafer et al., Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer, J ELEC MAT, 28(7), 1999, pp. 881-886
Authors:
Rubini, S
Bonanni, B
Pelucchi, E
Franciosi, A
Zhuang, Y
Bauer, G
Citation: S. Rubini et al., CdTe epitaxial layers in ZnSe-based heterostructures, J CRYST GR, 202, 1999, pp. 465-469
Authors:
Marinelli, C
Sorba, L
Muller, BH
Kumar, D
Orani, D
Rubini, S
Franciosi, A
De Franceschi, S
Lazzarino, M
Beltram, F
Citation: C. Marinelli et al., Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs, J CRYST GR, 202, 1999, pp. 769-772
Authors:
Heun, S
Schmidt, T
Slezak, J
Diaz, J
Prince, KC
Muller, BH
Franciosi, A
Citation: S. Heun et al., Lateral inhomogeneities in engineered Schottky barriers, J CRYST GR, 202, 1999, pp. 795-799
Authors:
Cingolani, R
Bastard, G
Labardi, M
Fuso, F
Allegrini, M
Sorba, L
Vanzetti, L
Franciosi, A
Citation: R. Cingolani et al., Spatially resolved near-field photoluminescence spectroscopy of II-VI quantum wells: The role of localized excitons, J APPL PHYS, 86(12), 1999, pp. 6793-6797
Authors:
Muller, BH
Lantier, R
Sorba, L
Heun, S
Rubini, S
Lazzarino, M
Franciosi, A
Napolitani, E
Romanato, F
Drigo, AV
Lazzarini, L
Salviati, G
Citation: Bh. Muller et al., Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers, J APPL PHYS, 85(12), 1999, pp. 8160-8169
Authors:
Hierro, A
Kwon, D
Goss, SH
Brillson, LJ
Ringel, SA
Rubini, S
Pelucchi, E
Franciosi, A
Citation: A. Hierro et al., Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy, APPL PHYS L, 75(6), 1999, pp. 832-834
Authors:
Pellegrini, V
Colombelli, R
Carusotto, I
Beltram, F
Rubini, S
Lantier, R
Franciosi, A
Vinegoni, C
Pavesi, L
Citation: V. Pellegrini et al., Resonant second harmonic generation in ZnSe bulk microcavity, APPL PHYS L, 74(14), 1999, pp. 1945-1947
Authors:
De Franceschi, S
Giazotto, F
Beltram, F
Sorba, L
Lazzarino, M
Franciosi, A
Citation: S. De Franceschi et al., Andreev reflection in Si-engineered Al/InGaAs hybrid junctions, APPL PHYS L, 73(26), 1998, pp. 3890-3892
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