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Results: 1-11 |
Results: 11
Six new Actinella (Bacillariophyta) species from Papua New Guinea, Australia and New Zealand: further evidence for widespread diatom endemism, in theAustralasian region
Authors: Sabbe, K Vanhoutte, K Lowe, RL Bergey, EA Biggs, BJF Francoeur, S Hodgson, D Vyverman, W
Citation: K. Sabbe et al., Six new Actinella (Bacillariophyta) species from Papua New Guinea, Australia and New Zealand: further evidence for widespread diatom endemism, in theAustralasian region, EUR J PHYC, 36(4), 2001, pp. 321-340
Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap
Authors: Zhang, Y Francoeur, S Mascarenhas, A Xin, HP Tu, CW
Citation: Y. Zhang et al., Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap, PHYS ST S-B, 228(1), 2001, pp. 287-291
Acyloxymethylzinc reagents: Preparation, reactivity, and solid-state structure of this novel class of cyclopropanating reagents
Authors: Charette, AB Beauchemin, A Francoeur, S
Citation: Ab. Charette et al., Acyloxymethylzinc reagents: Preparation, reactivity, and solid-state structure of this novel class of cyclopropanating reagents, J AM CHEM S, 123(33), 2001, pp. 8139-8140
New family of cyclopropanating reagents: Synthesis, reactivity, and stability studies of iodomethylzinc phenoxides
Authors: Charette, AB Francoeur, S Martel, J Wilb, N
Citation: Ab. Charette et al., New family of cyclopropanating reagents: Synthesis, reactivity, and stability studies of iodomethylzinc phenoxides, ANGEW CHEM, 39(24), 2000, pp. 4539
High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H
Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406
Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices
Authors: Francoeur, S Zhang, Y Norman, AG Alsina, F Mascarenhas, A Reno, JL Jones, ED Lee, SR Follstaedt, DM
Citation: S. Francoeur et al., Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices, APPL PHYS L, 77(12), 2000, pp. 1765-1767
Quantitative determination of the order parameter in epitaxial layers of ZnSnP2
Authors: Francoeur, S Seryogin, GA Nikishin, SA Temkin, H
Citation: S. Francoeur et al., Quantitative determination of the order parameter in epitaxial layers of ZnSnP2, APPL PHYS L, 76(15), 2000, pp. 2017-2019
High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
Authors: Nikishin, SA Antipov, VG Francoeur, S Faleev, NN Seryogin, GA Elyukhin, VA Temkin, H Prokofyeva, TI Holtz, M Konkar, A Zollner, S
Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486
High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S Grave de Peralta, L Seryogin, GA Temkin, H Prokofyeva, TI Holtz, M Chu, SNG
Citation: Sa. Nikishin et al., High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, APPL PHYS L, 75(14), 1999, pp. 2073-2075
Excitons bound to nitrogen clusters in GaAsN
Authors: Francoeur, S Nikishin, SA Jin, C Qiu, Y Temkin, H
Citation: S. Francoeur et al., Excitons bound to nitrogen clusters in GaAsN, APPL PHYS L, 75(11), 1999, pp. 1538-1540
X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs
Authors: Francoeur, S Seryogin, GA Nikishin, SA Temkin, H
Citation: S. Francoeur et al., X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs, APPL PHYS L, 74(24), 1999, pp. 3678-3680
Risultati: 1-11 |