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Results: 1-10 |
Results: 10
Integration of terraced laser diode and garnet crystals by wafer direct bonding
Authors: Yokoi, H Waniishi, T Mizumoto, T Shimizu, M Sakurai, K Futakuchi, N Nakano, Y
Citation: H. Yokoi et al., Integration of terraced laser diode and garnet crystals by wafer direct bonding, JPN J A P 1, 40(5A), 2001, pp. 3463-3467
Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer
Authors: Yokoi, H Mizumoto, T Masaki, H Futakuchi, N Ohtsuka, T Nakano, Y
Citation: H. Yokoi et al., Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer, ELECTR LETT, 37(4), 2001, pp. 240-241
Waveguide-type PnpN optical thyristor operating at 1.55 mu m
Authors: Kim, DG Lee, JJ Choi, YW Lee, S Kang, BK Kim, SH Futakuchi, N Nakano, Y
Citation: Dg. Kim et al., Waveguide-type PnpN optical thyristor operating at 1.55 mu m, IEEE PHOTON, 12(9), 2000, pp. 1219-1221
X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
Authors: Tabuchi, M Takahashi, R Araki, M Hirayama, K Futakuchi, N Shimogaki, Y Nakano, Y Takeda, Y
Citation: M. Tabuchi et al., X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes, APPL SURF S, 159, 2000, pp. 250-255
MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor
Authors: Feron, O Sugiyama, M Asawamethapant, W Futakuchi, N Feurprier, Y Nakano, Y Shimogaki, Y
Citation: O. Feron et al., MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor, APPL SURF S, 159, 2000, pp. 318-327
Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift
Authors: Yokoi, H Mizumoto, T Shinjo, N Futakuchi, N Nakano, Y
Citation: H. Yokoi et al., Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift, APPL OPTICS, 39(33), 2000, pp. 6158-6164
Analysis of GaInAsP surfaces by contact-angle measurement for wafer directbonding with garnet crystals
Authors: Yokoi, H Mizumoto, T Shimizu, M Waniishi, T Futakuchi, N Kaida, N Nakano, Y
Citation: H. Yokoi et al., Analysis of GaInAsP surfaces by contact-angle measurement for wafer directbonding with garnet crystals, JPN J A P 1, 38(8), 1999, pp. 4780-4783
Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator
Authors: Yokoi, H Mizumoto, T Shimizu, M Futakuchi, N Kaida, N Nakano, Y
Citation: H. Yokoi et al., Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator, JPN J A P 1, 38(1A), 1999, pp. 195-197
Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding
Authors: Yokoi, H Mizumoto, T Shinjo, N Futakuchi, N Kaida, N Nakano, Y
Citation: H. Yokoi et al., Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding, IEE P-OPTO, 146(2), 1999, pp. 105-110
Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled distributed-feedback laser diodes
Authors: Futakuchi, N Taguchi, T Nakano, Y
Citation: N. Futakuchi et al., Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled distributed-feedback laser diodes, IEEE S T QU, 5(3), 1999, pp. 463-468
Risultati: 1-10 |