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Authors: GAIGHER HL ALBERTS HW

Citation: Hl. Gaigher et Hw. Alberts, TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING, Radiation effects and defects in solids, 125(4), 1993, pp. 373-380

Authors: ALBERTS HW GAIGHER HL BREDELL LJ

Citation: Hw. Alberts et al., CHANNELING AND TEM INVESTIGATIONS OF PULSE ELECTRON-BEAM ANNEALED GAAS IMPLANTED WITH PB, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 519-522