Authors: GALITSYN YG MARAKHOVKA II MOSHCHENKO SP MANSUROV VG

Citation: Yg. Galitsyn et al., AS-4 INCORPORATION KINETICS IN GAAS(001) MOLECULAR-BEAM EPITAXY, Technical physics letters, 24(4), 1998, pp. 260-262

Authors: GALITSYN YG MANSUROV VG MARAHOVKA II PETRENKO IP

Citation: Yg. Galitsyn et al., COMMENSURATE AND INCOMMENSURATE INDIUM PHASES ON A (111)A INAS SURFACE, Semiconductors, 32(1), 1998, pp. 78-83

Authors: GALITSYN YG MARAKHOVKA II MOSHCHENKO SP KURYSHEV GL POSHEVNEV VI MANSUROV VG

Citation: Yg. Galitsyn et al., INTERACTION KINETICS OF AS-4-C-GA(IN) CLU STERS ON (001)GAAS AND INASSURFACES, Doklady Akademii nauk. Rossijskaa akademia nauk, 359(1), 1998, pp. 48-54

Authors: GALITSYN YG MOSHCHENKO SP SURANOV AS

Citation: Yg. Galitsyn et al., KINETICS OF MBE INCORPORATION OF AS-4 ON THE (001)GAAS SURFACE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7-8, 1998, pp. 81-89

Authors: SAKHNO VI DOLGIKH AV CHUBAREV VG MARAKHOVKA II GALITSYN YG MANSUROV VG SURANOV AS

Citation: Vi. Sakhno et al., ARSENIDE-GALLIUM PHOTOCATHODE BASED ON AL GAAS P+-GAAS/ALGAAS HETEROEPITAXIAL STRUCTURES GROWN BY THE MOLECULAR-RAY EPITAXY METHOD/, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 64-68