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Results:
1-11
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Results: 11
Authors:
GALVAGNO G
LAFERLA A
LAVIA F
RAINERI V
GASPAROTTO A
CARNERA A
RIMINI E
Citation: G. Galvagno et al., HOLE MOBILITY IN ALUMINUM IMPLANTED SILICON, Semiconductor science and technology, 12(11), 1997, pp. 1433-1437
Authors:
RIMINI E
LAFERLA A
GALVAGNO G
COFFA S
FRANZO G
PRIOLO F
Citation: E. Rimini et al., OXYGEN-IMPURITY INTERACTIONS IN CRYSTALLINE SILICON - THE CASES OF ALUMINUM AND ERBIUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 18-23
Authors:
LAFERLA A
GALVAGNO G
RINAUDO S
RAINERI V
FRANCO G
CAMALLERI M
GASPAROTTO A
CARNERA A
RIMINI E
Citation: A. Laferla et al., ION-IMPLANTATION AND DIFFUSION OF AL IN A SIO2 SI SYSTEM/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 378-381
Authors:
LAFERLA A
GALVAGNO G
RAINERI V
PRIOLO F
CARNERA A
GASPAROTTO A
RIMINI E
Citation: A. Laferla et al., DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 232-235
Authors:
RIMINI E
RAINERI V
LAFERLA A
GALVAGNO G
FRANCO G
CARNERA A
GASPAROTTO A
Citation: E. Rimini et al., IMPURITY EFFECTS ON OXYGEN PRECIPITATION INDUCED BY MEV IMPLANTS IN CZ SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 419-423
Authors:
GALVAGNO G
LAVIA F
SAGGIO MG
LAMANTIA A
RIMINI E
Citation: G. Galvagno et al., 2-DIMENSIONAL ALUMINUM DIFFUSION IN SILICON - EXPERIMENTAL RESULTS AND SIMULATIONS, Journal of the Electrochemical Society, 142(5), 1995, pp. 1585-1590
Authors:
RAINERI V
PRIVITERA V
GALVAGNO G
PRIOLO F
RIMINI E
Citation: V. Raineri et al., CHANNELING IMPLANTS IN SILICON-CRYSTALS, Materials chemistry and physics, 38(2), 1994, pp. 105-130
Authors:
GALVAGNO G
LAFERLA A
SPINELLA C
PRIOLO F
RAINERI V
TORRISI L
RIMINI E
CARNERA A
GASPAROTTO A
Citation: G. Galvagno et al., AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON, Journal of applied physics, 76(4), 1994, pp. 2070-2077
Authors:
GALVAGNO G
LAVIA F
PRIOLO F
RIMINI E
Citation: G. Galvagno et al., DIFFUSION AND OUTDIFFUSION OF ALUMINUM IMPLANTED INTO SILICON, Semiconductor science and technology, 8(4), 1993, pp. 488-494
Authors:
GALVAGNO G
SCANDURRA A
RAINERI V
SPINELLA C
TORRISI A
LAFERLA A
SCIASCIA V
RIMINI E
Citation: G. Galvagno et al., AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI, Journal of the Electrochemical Society, 140(8), 1993, pp. 2313-2318
Authors:
SCANDURRA A
GALVAGNO G
RAINERI V
FRISINA F
TORRISI A
Citation: A. Scandurra et al., DIFFUSION AND ELECTRICAL BEHAVIOR OF AL IMPLANTED INTO CAPPED SI, Journal of the Electrochemical Society, 140(7), 1993, pp. 2057-2062
Risultati:
1-11
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