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Results: 1-15 |
Results: 15
ETCHING, INSERTION, AND ABSTRACTION REACTIONS OF ATOMIC DEUTERIUM WITH AMORPHOUS-SILICON HYDRIDE FILMS
Authors: CHIANG CM GATES SM LEE SS KONG M BENT SF
Citation: Cm. Chiang et al., ETCHING, INSERTION, AND ABSTRACTION REACTIONS OF ATOMIC DEUTERIUM WITH AMORPHOUS-SILICON HYDRIDE FILMS, JOURNAL OF PHYSICAL CHEMISTRY B, 101(46), 1997, pp. 9537-9547
AN AMORPHOUS-SILICON THIN-FILM-TRANSISTOR FABRICATED AT 125-DEGREES-CBY DC REACTIVE MAGNETRON SPUTTERING
Authors: MCCORMICK CS WEBER CE ABELSON JR GATES SM
Citation: Cs. Mccormick et al., AN AMORPHOUS-SILICON THIN-FILM-TRANSISTOR FABRICATED AT 125-DEGREES-CBY DC REACTIVE MAGNETRON SPUTTERING, Applied physics letters, 70(2), 1997, pp. 226-227
INFRARED STUDY OF THE REACTIONS OF ATOMIC DEUTERIUM WITH AMORPHOUS-SILICON MONOHYDRIDE
Authors: LEE SS KONG MJ BENT SF CHIANG CM GATES SM
Citation: Ss. Lee et al., INFRARED STUDY OF THE REACTIONS OF ATOMIC DEUTERIUM WITH AMORPHOUS-SILICON MONOHYDRIDE, Journal of physical chemistry, 100(51), 1996, pp. 20015-20020
SURFACE-CHEMISTRY IN THE CHEMICAL-VAPOR-DEPOSITION OF ELECTRONIC MATERIALS
Authors: GATES SM
Citation: Sm. Gates, SURFACE-CHEMISTRY IN THE CHEMICAL-VAPOR-DEPOSITION OF ELECTRONIC MATERIALS, Chemical reviews, 96(4), 1996, pp. 1519-1532
HYDROGEN ON POLYCRYSTALLINE DIAMOND FILMS - STUDIES OF ISOTHERMAL DESORPTION AND ATOMIC DEUTERIUM ABSTRACTION
Authors: KOLESKE DD GATES SM THOMS BD RUSSELL JN BUTLER JE
Citation: Dd. Koleske et al., HYDROGEN ON POLYCRYSTALLINE DIAMOND FILMS - STUDIES OF ISOTHERMAL DESORPTION AND ATOMIC DEUTERIUM ABSTRACTION, The Journal of chemical physics, 102(2), 1995, pp. 992-1002
HYDROGEN DESORPTION AND AMMONIA ADSORPTION ON POLYCRYSTALLINE GAN SURFACES
Authors: CHIANG CM GATES SM BENSAOULA A SCHULTZ JA
Citation: Cm. Chiang et al., HYDROGEN DESORPTION AND AMMONIA ADSORPTION ON POLYCRYSTALLINE GAN SURFACES, Chemical physics letters, 246(3), 1995, pp. 275-278
SI ALE USING CHLORINE HYDROGEN-EXCHANGE - FUNDAMENTALS AND FILMS
Authors: KOLESKE DD GATES SM
Citation: Dd. Koleske et Sm. Gates, SI ALE USING CHLORINE HYDROGEN-EXCHANGE - FUNDAMENTALS AND FILMS, Applied surface science, 82-3, 1994, pp. 344-347
ISOTHERMAL DESORPTION OF HYDROGEN FROM POLYCRYSTALLINE DIAMOND FILMS
Authors: KOLESKE DD GATES SM THOMS BD RUSSELL JN BUTLER JE
Citation: Dd. Koleske et al., ISOTHERMAL DESORPTION OF HYDROGEN FROM POLYCRYSTALLINE DIAMOND FILMS, Surface science, 320(3), 1994, pp. 120000105-120000111
ATOMIC H-ABSTRACTION OF SURFACE-H ON SI - AN ELEY-RIDEAL MECHANISM
Authors: KOLESKE DD GATES SM JACKSON B
Citation: Dd. Koleske et al., ATOMIC H-ABSTRACTION OF SURFACE-H ON SI - AN ELEY-RIDEAL MECHANISM, The Journal of chemical physics, 101(4), 1994, pp. 3301-3309
ATOMIC LAYER EPITAXY OF SI ON GE(100) - DIRECT RECOILING STUDIES OF FILM MORPHOLOGY
Authors: KOLESKE DD GATES SM
Citation: Dd. Koleske et Sm. Gates, ATOMIC LAYER EPITAXY OF SI ON GE(100) - DIRECT RECOILING STUDIES OF FILM MORPHOLOGY, Journal of applied physics, 76(3), 1994, pp. 1615-1621
ATOMIC LAYER EPITAXY OF SI ON GE(100) USING SI2CL6 AND ATOMIC-HYDROGEN
Authors: KOLESKE DD GATES SM
Citation: Dd. Koleske et Sm. Gates, ATOMIC LAYER EPITAXY OF SI ON GE(100) USING SI2CL6 AND ATOMIC-HYDROGEN, Applied physics letters, 64(7), 1994, pp. 884-886
NANOCRYSTAL SEEDING - A LOW-TEMPERATURE ROUTE TO POLYCRYSTALLINE SI FILMS
Authors: HEATH JR GATES SM CHESS CA
Citation: Jr. Heath et al., NANOCRYSTAL SEEDING - A LOW-TEMPERATURE ROUTE TO POLYCRYSTALLINE SI FILMS, Applied physics letters, 64(26), 1994, pp. 3569-3571
FACILE ABSTRACTION OF CHEMISORBED-D ON SI(100) BY ATOMIC-H
Authors: KOLESKE DD GATES SM SCHULTZ JA
Citation: Dd. Koleske et al., FACILE ABSTRACTION OF CHEMISORBED-D ON SI(100) BY ATOMIC-H, The Journal of chemical physics, 99(7), 1993, pp. 5619-5622
KINETICS OF ATOMIC-HYDROGEN PLUS ADSORBED BR REACTIONS ON SI(100) ANDSI(111) SURFACES
Authors: KOLESKE DD GATES SM
Citation: Dd. Koleske et Sm. Gates, KINETICS OF ATOMIC-HYDROGEN PLUS ADSORBED BR REACTIONS ON SI(100) ANDSI(111) SURFACES, The Journal of chemical physics, 99(10), 1993, pp. 8218-8228
SURFACE-MORPHOLOGY OF SI ON SI(100) GROWN BELOW 500-DEGREES-C USING HCL EXCHANGE CHEMISTRY/
Authors: KOLESKE DD GATES SM
Citation: Dd. Koleske et Sm. Gates, SURFACE-MORPHOLOGY OF SI ON SI(100) GROWN BELOW 500-DEGREES-C USING HCL EXCHANGE CHEMISTRY/, Journal of applied physics, 74(6), 1993, pp. 4245-4247
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