AAAAAA

   
Results: 1-11 |
Results: 11
BISMUTH-INDUCED RESTRUCTURING OF THE GASB(110) SURFACE
Authors: VANGEMMEREN T LOTTERMOSER L FALKENBERG G SEEHOFER L JOHNSON RL GAVIOLI L MARIANI C FEIDENHANSL R LANDEMARK E SMILGIES D NIELSEN M
Citation: T. Vangemmeren et al., BISMUTH-INDUCED RESTRUCTURING OF THE GASB(110) SURFACE, Physical review. B, Condensed matter, 57(7), 1998, pp. 3749-3752
ELECTRONIC-PROPERTIES OF THE BI SI(100) INTERFACE/
Authors: GAVIOLI L BETTI MG MARIANI C
Citation: L. Gavioli et al., ELECTRONIC-PROPERTIES OF THE BI SI(100) INTERFACE/, Surface science, 409(2), 1998, pp. 207-212
ELECTRONIC-PROPERTIES OF (2XN)-BI RECONSTRUCTIONS ON SI(100)
Authors: GAVIOLI L BETTI MG MARIANI C
Citation: L. Gavioli et al., ELECTRONIC-PROPERTIES OF (2XN)-BI RECONSTRUCTIONS ON SI(100), Surface science, 377(1-3), 1997, pp. 215-219
DYNAMICS OF THE SI(100) SURFACE
Authors: GAVIOLI L BETTI MG MARIANI C SHKREBTII AI DELSOLE R CEPEK C GOLDONI A MODESTI S
Citation: L. Gavioli et al., DYNAMICS OF THE SI(100) SURFACE, Surface science, 377(1-3), 1997, pp. 360-364
DYNAMICS-INDUCED SURFACE METALLIZATION OF SI(100)
Authors: GAVIOLI L BETTI MG MARIANI C
Citation: L. Gavioli et al., DYNAMICS-INDUCED SURFACE METALLIZATION OF SI(100), Physical review letters, 77(18), 1996, pp. 3869-3872
SURFACE ELECTRONIC-STRUCTURE AT SI(100)-(2X1)
Authors: GAVIOLI L BETTI MG CRICENTI A MARIANI C
Citation: L. Gavioli et al., SURFACE ELECTRONIC-STRUCTURE AT SI(100)-(2X1), Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 541-545
TURN-INITIAL VERSUS TURN-FINAL LAUGHTER - 2 TECHNIQUES FOR INITIATINGREMEDY IN ENGLISH ITALIAN BOOKSHOP SERVICE ENCOUNTERS
Authors: GAVIOLI L
Citation: L. Gavioli, TURN-INITIAL VERSUS TURN-FINAL LAUGHTER - 2 TECHNIQUES FOR INITIATINGREMEDY IN ENGLISH ITALIAN BOOKSHOP SERVICE ENCOUNTERS, Discourse processes, 19(3), 1995, pp. 369-384
OVERLAYER GROWTH AND ELECTRONIC-PROPERTIES OF THE BI GASB(11O) INTERFACE/
Authors: GAVIOLI L BETTI MG CASARINI P MARIANI C
Citation: L. Gavioli et al., OVERLAYER GROWTH AND ELECTRONIC-PROPERTIES OF THE BI GASB(11O) INTERFACE/, Physical review. B, Condensed matter, 51(23), 1995, pp. 16822-16831
BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI III-V(110) INTERFACES/
Authors: BERSELLI D BETTI MG GAVIOLI L MARIANI C
Citation: D. Berselli et al., BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI III-V(110) INTERFACES/, Surface science, 333, 1995, pp. 496-500
A NEW BLOOD MODULE FOR CONTINUOUS RENAL REPLACEMENT THERAPIES
Authors: RONCO C FECONDINI L GAVIOLI L CONZ P MILAN M DELLAQUILA R BRAGANTINI L CHIARAMONTE S BRENDOLAN A CREPALDI C FERIANI M LAGRECA G
Citation: C. Ronco et al., A NEW BLOOD MODULE FOR CONTINUOUS RENAL REPLACEMENT THERAPIES, International journal of artificial organs, 17(1), 1994, pp. 14-18
BISMUTH ON GASB(110) - ELECTRONIC AND DIELECTRIC-PROPERTIES
Authors: GAVIOLI L BETTI MG CASARINI P MARIANI C
Citation: L. Gavioli et al., BISMUTH ON GASB(110) - ELECTRONIC AND DIELECTRIC-PROPERTIES, Physical review. B, Condensed matter, 49(4), 1994, pp. 2911-2914
Risultati: 1-11 |