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Results: 1-14 |
Results: 14
A NEW SURFACE ELECTRON-EMISSION MECHANISM IN DIAMOND CATHODES
Authors: GEIS MW EFREMOW NN KROHN KE TWICHELL JC LYSZCZARZ TM KALISH R GREER JA TABAT MD
Citation: Mw. Geis et al., A NEW SURFACE ELECTRON-EMISSION MECHANISM IN DIAMOND CATHODES, Nature, 393(6684), 1998, pp. 431-435
NANOCHANNEL FABRICATION FOR CHEMICAL SENSORS
Authors: STERN MB GEIS MW CURTIN JE
Citation: Mb. Stern et al., NANOCHANNEL FABRICATION FOR CHEMICAL SENSORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2887-2891
DIAMOND GRIT-BASED FIELD-EMISSION CATHODES
Authors: GEIS MW TWICHELL JC EFREMOW NN KROHN KE STERN MB LYSZCZARZ TM
Citation: Mw. Geis et al., DIAMOND GRIT-BASED FIELD-EMISSION CATHODES, IEEE electron device letters, 18(12), 1997, pp. 595-598
HOLE TRAPS IN NATURAL TYPE IIB DIAMOND
Authors: GEIS MW TWICHELL JC
Citation: Mw. Geis et Jc. Twichell, HOLE TRAPS IN NATURAL TYPE IIB DIAMOND, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1514-1522
RESONANT-TUNNELING TRANSMISSION-LINE RELAXATION-OSCILLATOR
Authors: BROWN ER PARKER CD VERGHESE S GEIS MW HARVEY JF
Citation: Er. Brown et al., RESONANT-TUNNELING TRANSMISSION-LINE RELAXATION-OSCILLATOR, Applied physics letters, 70(21), 1997, pp. 2787-2789
DIAMOND EMITTERS FABRICATION AND THEORY
Authors: GEIS MW TWICHELL JC LYSZCZARZ TM
Citation: Mw. Geis et al., DIAMOND EMITTERS FABRICATION AND THEORY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2060-2067
COMPARISON OF ELECTRIC-FIELD EMISSION FROM NITROGEN-DOPED, TYPE LB DIAMOND, AND BORON-DOPED DIAMOND
Authors: GEIS MW TWICHELL JC EFREMOW NN KROHN K LYSZCZARZ TM
Citation: Mw. Geis et al., COMPARISON OF ELECTRIC-FIELD EMISSION FROM NITROGEN-DOPED, TYPE LB DIAMOND, AND BORON-DOPED DIAMOND, Applied physics letters, 68(16), 1996, pp. 2294-2296
SPECIFIC CONTACT RESISTANCE MEASUREMENTS OF OHMIC CONTACTS TO SEMICONDUCTING DIAMOND
Authors: HEWETT CA TAYLOR MJ ZEIDLER JR GEIS MW
Citation: Ca. Hewett et al., SPECIFIC CONTACT RESISTANCE MEASUREMENTS OF OHMIC CONTACTS TO SEMICONDUCTING DIAMOND, Journal of applied physics, 77(2), 1995, pp. 755-760
ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTERH-2, O-2 AND CS TREATMENT
Authors: GEIS MW TWICHELL JC MACAULAY J OKANO K
Citation: Mw. Geis et al., ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTERH-2, O-2 AND CS TREATMENT, Applied physics letters, 67(9), 1995, pp. 1328-1330
MOSAIC DIAMOND SUBSTRATES APPROACHING SINGLE-CRYSTAL QUALITY USING CUBE-SHAPED DIAMOND SEEDS
Authors: GEIS MW EFREMOW NN SUSALKA R TWICHELL JC SNAIL KA SPIRO C SWEETING B HOLLY S
Citation: Mw. Geis et al., MOSAIC DIAMOND SUBSTRATES APPROACHING SINGLE-CRYSTAL QUALITY USING CUBE-SHAPED DIAMOND SEEDS, DIAMOND AND RELATED MATERIALS, 4(1), 1994, pp. 76-82
DIAMOND FILM SEMICONDUCTORS (VOL 267, PG 84, 1992)
Authors: GEIS MW ANGUS JC
Citation: Mw. Geis et Jc. Angus, DIAMOND FILM SEMICONDUCTORS (VOL 267, PG 84, 1992), Scientific American, 270(3), 1994, pp. 10-10
UNTITLED - (PG 18, 1993)
Authors: GEIS MW ANGUS JC
Citation: Mw. Geis et Jc. Angus, UNTITLED - (PG 18, 1993), Scientific American, 270(3), 1994, pp. 10-10
EFFECT OF BACK CONTACT IMPEDANCE ON FREQUENCY-DEPENDENCE OF CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL DIAMOND DIODES
Authors: VENKATESAN V DAS K VONWINDHEIM JA GEIS MW
Citation: V. Venkatesan et al., EFFECT OF BACK CONTACT IMPEDANCE ON FREQUENCY-DEPENDENCE OF CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL DIAMOND DIODES, Applied physics letters, 63(8), 1993, pp. 1065-1067
HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES
Authors: GEIS MW EFREMOW NN VONWINDHEIM JA
Citation: Mw. Geis et al., HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES, Applied physics letters, 63(7), 1993, pp. 952-954
Risultati: 1-14 |