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Results: 1-23 |
Results: 23
ON THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN STRAINED QUANTUM-WIRE SUPERLATTICES OF NON-PARABOLIC SEMICONDUCTORS WITH GRADED STRUCTURES - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION
Authors: GHATAK KP DUTTA S BASU DK NAG B
Citation: Kp. Ghatak et al., ON THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN STRAINED QUANTUM-WIRE SUPERLATTICES OF NON-PARABOLIC SEMICONDUCTORS WITH GRADED STRUCTURES - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(2), 1998, pp. 227-240
A SIMPLE THEORETICAL-ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS OF QUANTIZED II-VI SEMICONDUCTORS
Authors: GHATAK KP NAG B
Citation: Kp. Ghatak et B. Nag, A SIMPLE THEORETICAL-ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS OF QUANTIZED II-VI SEMICONDUCTORS, Physica status solidi. b, Basic research, 205(2), 1998, pp. 519-535
A SIMPLE THEORETICAL-ANALYSIS OF THE MAGNETIC-SUSCEPTIBILITIES IN QUANTUM WIRES OF IV-VI SEMICONDUCTORS
Authors: NAG B GHATAK KP
Citation: B. Nag et Kp. Ghatak, A SIMPLE THEORETICAL-ANALYSIS OF THE MAGNETIC-SUSCEPTIBILITIES IN QUANTUM WIRES OF IV-VI SEMICONDUCTORS, Journal of physics and chemistry of solids, 59(5), 1998, pp. 713-719
A SIMPLE THEORETICAL-ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF BISMUTH UNDER QUANTIZING MAGNETIC-FIELD
Authors: GHATAK KP NAG B
Citation: Kp. Ghatak et B. Nag, A SIMPLE THEORETICAL-ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF BISMUTH UNDER QUANTIZING MAGNETIC-FIELD, Journal of physics and chemistry of solids, 59(3), 1998, pp. 411-415
THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SMALL-GAP MATERIALS
Authors: GHATAK KP BANERJEE JP NAG B
Citation: Kp. Ghatak et al., THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SMALL-GAP MATERIALS, Journal of applied physics, 83(3), 1998, pp. 1420-1425
ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF IV-VI COMPOUNDS IN THEPRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP MITRA B NAG B
Citation: Kp. Ghatak et al., ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF IV-VI COMPOUNDS IN THEPRESENCE OF A PARALLEL MAGNETIC-FIELD, Physica status solidi. b, Basic research, 199(1), 1997, pp. 95-103
A SIMPLE THEORETICAL-ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN QUANTUM WIRES OF IV-VI SEMICONDUCTORS IN THE PRESENCEOF A PARALLEL MAGNETIC-FIELD
Authors: NAG B GHATAK KP
Citation: B. Nag et Kp. Ghatak, A SIMPLE THEORETICAL-ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN QUANTUM WIRES OF IV-VI SEMICONDUCTORS IN THE PRESENCEOF A PARALLEL MAGNETIC-FIELD, Journal of physics and chemistry of solids, 58(3), 1997, pp. 427-432
ON A SIMPLIFIED ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SEMICONDUCTOR SUPERLATTICES IN THE PRESENCE OF CROSSED ELECTRIC AND QUANTIZING MAGNETIC-FIELDS
Authors: GHATAK KP BASU DK NAG B
Citation: Kp. Ghatak et al., ON A SIMPLIFIED ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SEMICONDUCTOR SUPERLATTICES IN THE PRESENCE OF CROSSED ELECTRIC AND QUANTIZING MAGNETIC-FIELDS, Journal of physics and chemistry of solids, 58(1), 1997, pp. 133-138
COMPUTER STUDIES OF QUASI READ GALLIUM-ARSENIDE IMPATT DIODE - INCLUDING THE EFFECT OF SPACE-CHARGE
Authors: BANERJEE JP GHOSH S NAG B GHATAK KP
Citation: Jp. Banerjee et al., COMPUTER STUDIES OF QUASI READ GALLIUM-ARSENIDE IMPATT DIODE - INCLUDING THE EFFECT OF SPACE-CHARGE, International journal of electronics, 82(4), 1997, pp. 335-345
THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF TERNARY AND QUATERNARY ALLOYS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION
Authors: GHATAK KP BANERJEE JP BHATTACHARYYA D NAG B
Citation: Kp. Ghatak et al., THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF TERNARY AND QUATERNARY ALLOYS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION, Nanotechnology, 7(2), 1996, pp. 110-116
INFLUENCE OF QUANTIZATION OF BAND STATES ON THE THERMOELECTRIC-POWER IN II-VI SEMICONDUCTORS
Authors: GHATAK KP BASU DK BASU D NAG B
Citation: Kp. Ghatak et al., INFLUENCE OF QUANTIZATION OF BAND STATES ON THE THERMOELECTRIC-POWER IN II-VI SEMICONDUCTORS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(8), 1996, pp. 947-961
ON THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF IV-VI COMPOUNDS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: NAG B GHATAK KP
Citation: B. Nag et Kp. Ghatak, ON THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF IV-VI COMPOUNDS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Physica scripta. T, 54(6), 1996, pp. 657-659
A SIMPLE THEORETICAL-ANALYSIS OF THE THERMOELECTRIC-POWER IN QUANTUM DOTS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP NAG B
Citation: Kp. Ghatak et B. Nag, A SIMPLE THEORETICAL-ANALYSIS OF THE THERMOELECTRIC-POWER IN QUANTUM DOTS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Nanostructured materials, 5(7-8), 1995, pp. 769-776
A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD
Authors: GHATAK KP BHATTACHARYA D BASU D NAG B
Citation: Kp. Ghatak et al., A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD, Physica status solidi. b, Basic research, 191(1), 1995, pp. 141-154
ON THE EFFECTIVE ELECTRON MASS IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS UNDER A PARALLEL MAGNETIC-FIELD
Authors: BHATTACHARYYA D GHATAK KP
Citation: D. Bhattacharyya et Kp. Ghatak, ON THE EFFECTIVE ELECTRON MASS IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS UNDER A PARALLEL MAGNETIC-FIELD, Physica status solidi. b, Basic research, 187(2), 1995, pp. 523-531
A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP BHATTACHARYYA D
Citation: Kp. Ghatak et D. Bhattacharyya, A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Physica scripta. T, 52(3), 1995, pp. 343-348
A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN QUANTUM-CONFINED NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP NAG B BHATTACHARYYA D
Citation: Kp. Ghatak et al., A SIMPLE ANALYSIS OF THE EINSTEIN RELATION IN QUANTUM-CONFINED NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Journal of low temperature physics, 101(5-6), 1995, pp. 983-1001
ON THE EINSTEIN RELATION IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP BHATTACHARYYA D
Citation: Kp. Ghatak et D. Bhattacharyya, ON THE EINSTEIN RELATION IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Physics letters. A, 184(4-5), 1994, pp. 366-369
A SIMPLE ANALYSIS OF THE THERMOELECTRIC-POWER IN ULTRATHIN BISMUTH-FILMS UNDER MAGNETIC QUANTIZATION
Authors: GHATAK KP MONDAL M
Citation: Kp. Ghatak et M. Mondal, A SIMPLE ANALYSIS OF THE THERMOELECTRIC-POWER IN ULTRATHIN BISMUTH-FILMS UNDER MAGNETIC QUANTIZATION, Physica status solidi. b, Basic research, 185(1), 1994, pp. 110000005-110000008
A SIMPLE ANALYSIS OF THE MAGNETIC-SUSCEPTIBILITIES IN QUANTUM DOTS OFOPTOELECTRONIC MATERIALS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP BHATTACHARYYA D
Citation: Kp. Ghatak et D. Bhattacharyya, A SIMPLE ANALYSIS OF THE MAGNETIC-SUSCEPTIBILITIES IN QUANTUM DOTS OFOPTOELECTRONIC MATERIALS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Physica status solidi. b, Basic research, 181(1), 1994, pp. 127-131
A SIMPLE THEORETICAL-ANALYSIS OF THE GATE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT DEVICES OF NONPARABOLIC MATERIALS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP BISWAS SN
Citation: Kp. Ghatak et Sn. Biswas, A SIMPLE THEORETICAL-ANALYSIS OF THE GATE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT DEVICES OF NONPARABOLIC MATERIALS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Solid-state electronics, 37(7), 1994, pp. 1437-1443
ON A SIMPLIFIED ANALYSIS OF THE EFFECTIVE ELECTRON MASS IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD
Authors: GHATAK KP BHATTACHARYYA D
Citation: Kp. Ghatak et D. Bhattacharyya, ON A SIMPLIFIED ANALYSIS OF THE EFFECTIVE ELECTRON MASS IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A PARALLEL MAGNETIC-FIELD, Physica status solidi. b, Basic research, 179(2), 1993, pp. 383-389
INTERBAND TUNNELING IN NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OFAN ELECTRIC-FIELD
Authors: CHAKRABORTY PK GHATAK KP
Citation: Pk. Chakraborty et Kp. Ghatak, INTERBAND TUNNELING IN NONPARABOLIC SEMICONDUCTORS IN THE PRESENCE OFAN ELECTRIC-FIELD, Journal of applied physics, 74(5), 1993, pp. 3246-3250
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