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Results:
1-18
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Results: 18
Authors:
GHISONI M
SJOLUND O
LARSSON A
THORDSON J
ANDERSSON T
WANG SM
HART L
Citation: M. Ghisoni et al., A COMPARATIVE-STUDY OF STRAIN RELAXATION EFFECTS ON THE PERFORMANCE OF INGAAS QUANTUM-WELL-BASED HETEROJUNCTION PHOTOTRANSISTORS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 768-779
Authors:
GHISONI M
BENGTSSON J
VUKUSIC JA
MARTINSSON H
LARSSON A
Citation: M. Ghisoni et al., SINGLEMODE AND MULTIMODE VCSELS OPERATING WITH CONTINUOUS RELIEF KINOFORM FOR FOCUSED SPOT-ARRAY GENERATION, IEEE photonics technology letters, 9(11), 1997, pp. 1466-1468
Authors:
SJOLUND O
LIN HT
RICH DH
GHISONI M
LARSSON A
WANG S
THORDSSON J
ANDERSSON TG
Citation: O. Sjolund et al., CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT STUDY OF PARTIALLY RELAXED ALGAAS GAAS/INGAAS HETEROJUNCTION PHOTOTRANSISTORS UNDER OPERATING-CONDITIONS/, Journal of applied physics, 82(3), 1997, pp. 1438-1445
Authors:
SJOLUND O
GHISONI M
LARSSON A
Citation: O. Sjolund et al., RESONANT CAVITY-ENHANCED INGAAS-ALGAAS HETEROJUNCTION PHOTOTRANSISTORS WITH AN OPTICAL DESIGN FOR HIGH UNIFORMITY AND YIELD, IEEE journal of quantum electronics, 33(8), 1997, pp. 1323-1332
Authors:
LIN HT
RICH DH
SJOLUND O
GHISONI M
LARSSON A
Citation: Ht. Lin et al., INFLUENCE OF STRUCTURAL DEFECTS ON CARRIER RECOMBINATION AND CURRENT GAIN IN AN INGAAS ALGAAS/GAAS HETEROJUNCTION PHOTOTRANSISTOR/, Journal of applied physics, 79(10), 1996, pp. 8015-8023
Authors:
GHISONI M
SJOLUND O
LARSSON A
WANG SM
Citation: M. Ghisoni et al., COMPARISON OF PARTIALLY RELAXED INGAAS GAAS BASED HIGH-PERFORMANCE PHOTOTRANSISTORS/, Applied physics letters, 69(12), 1996, pp. 1773-1775
Authors:
LIN HT
RICH DH
SJOLUND O
GHISONI M
LARSSON A
Citation: Ht. Lin et al., CATHODOLUMINESCENCE STUDY OF THE INFLUENCE OF MISFIT DISLOCATIONS ON HOLE ACCUMULATION IN AN N-ALGAAS P-GAAS/N-INGAAS HETEROJUNCTION PHOTOTRANSISTOR/, Applied physics letters, 69(11), 1996, pp. 1602-1604
Authors:
WANG H
LIKAMWA P
GHISONI M
PARRY G
STAVRINOU PN
ROBERTS C
MILLER A
Citation: H. Wang et al., ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR, IEEE photonics technology letters, 7(2), 1995, pp. 173-175
UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BYIMPURITY FREE VACANCY DIFFUSION
Authors:
LYCETT SJ
DEWDNEY AJ
GHISONI M
NORMAN CE
MURRAY R
SANSOM D
ROBERTS JS
Citation: Sj. Lycett et al., UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BYIMPURITY FREE VACANCY DIFFUSION, Journal of electronic materials, 24(3), 1995, pp. 197-202
Authors:
HART L
GHISONI M
STAVRINOU P
ROBERTS C
PARRY G
Citation: L. Hart et al., X-RAY CHARACTERIZATION OF INGAAS ALAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES/, Materials science and technology, 11(1), 1995, pp. 50-53
Authors:
KHAN A
WOODBRIDGE K
GHISONI M
PARRY G
BEYER G
ROBERTS J
PATE M
HILL G
Citation: A. Khan et al., APPLICATION OF INTERMIXING TO P-TYPE GAAS ALAS DISTRIBUTED BRAGG REFLECTORS FOR SERIES RESISTANCE REDUCTION IN VERTICAL-CAVITY DEVICES/, Journal of applied physics, 77(10), 1995, pp. 4921-4926
Authors:
SJOLUND O
GHISONI M
LARSSON A
THORDSON J
ANDERSSON T
Citation: O. Sjolund et al., PARTIALLY RELAXED MULTIQUANTUM-WELL INGAAS ALGAAS HETEROJUNCTION PHOTOTRANSISTOR OPERATING AT 955-970NM/, Electronics Letters, 31(21), 1995, pp. 1870-1871
Authors:
SJOLUND O
GHISONI M
LARSSON A
Citation: O. Sjolund et al., HIGH-GAIN RESONANT-CAVITY ENHANCED INGAAS AIGAAS HETEROJUNCTION PHOTOTRANSISTOR RESONANT AT 930NM/, Electronics Letters, 31(11), 1995, pp. 917-918
Authors:
GHISONI M
PARRY G
LYCETT S
DEWDNEY A
HART L
MURRAY R
BUTTON C
ROBERTS JS
Citation: M. Ghisoni et al., OBSERVATION OF BLUE-SHIFT IN GAAS INGAP QUANTUM-WELL P-I-N-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 323-326
Authors:
GHISONI M
PARRY G
HART L
ROBERTS C
MARINOPOULOU A
STAVRINOU PN
Citation: M. Ghisoni et al., EFFECT OF WELL BARRIER RATIO ON THE PERFORMANCE OF STRAINED INGAAS/GAAS QUANTUM-WELL MODULATORS/, Electronics Letters, 30(24), 1994, pp. 2067-2069
Authors:
GHISONI M
PARRY G
HART L
ROBERTS C
STAVRINOU P
Citation: M. Ghisoni et al., ROOM-TEMPERATURE CHARACTERIZATION OF INGAAS ALAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES/, Applied physics letters, 65(26), 1994, pp. 3323-3325
Authors:
GHISONI M
MURRAY R
RIVERS AW
PATE M
HILL G
WOODBRIDGE K
PARRY G
Citation: M. Ghisoni et al., AN OPTICAL STUDY OF ENCAPSULANT THICKNESS-CONTROLLED INTERDIFFUSION OF ASYMMETRIC GAAS QUANTUM-WELL MATERIAL, Semiconductor science and technology, 8(10), 1993, pp. 1791-1796
Authors:
NORMAN CE
GHISONI M
Citation: Ce. Norman et M. Ghisoni, CATHODOLUMINESCENCE FROM INTERMIXED QUANTUM-WELL STRUCTURES - EVIDENCE OF REMOTE LUMINESCENCE, Scanning, 15(6), 1993, pp. 325-330
Risultati:
1-18
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