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Results: 3
A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS
Authors:
KOURKOUTAS CD KOVACS B EUTHYMIOU PC SZENTPALI B SOMOGYI K GIAKOUMAKIS GE
Citation:
Cd. Kourkoutas et al., A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS, Solid state communications, 89(1), 1994, pp. 45-49
EXTRACTION OF SCHOTTKY DIODE (AND P-N-JUNCTION) PARAMETERS FROM IV CHARACTERISTICS
Authors:
EVANGELOU EK PAPADIMITRIOU L DIMITRIADES CA GIAKOUMAKIS GE
Citation:
Ek. Evangelou et al., EXTRACTION OF SCHOTTKY DIODE (AND P-N-JUNCTION) PARAMETERS FROM IV CHARACTERISTICS, Solid-state electronics, 36(11), 1993, pp. 1633-1635
DEEP LEVELS IN BETA-FESI2 N-SI HETEROJUNCTIONS/
Authors:
EVANGELOU EK GIAKOUMAKIS GE DIMITRIADIS CA
Citation:
Ek. Evangelou et al., DEEP LEVELS IN BETA-FESI2 N-SI HETEROJUNCTIONS/, Solid state communications, 86(5), 1993, pp. 309-312
Risultati:
1-3
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