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Results: 1-25/31
Authors:
TORREALBAANZOLA F
CHAMBAUDET A
THEOBALD JG
JOUFFROY M
JANY C
FOULON F
BERGONZO P
GICQUEL A
TARDIEU A
Citation: F. Torrealbaanzola et al., HIGH-FREQUENCY PHOTOCONDUCTIVITY OF CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 7(9), 1998, pp. 1338-1341
Authors:
FINDELINGDUFOUR C
GICQUEL A
CHIRON R
Citation: C. Findelingdufour et al., GROWTH OF LARGE SINGLE-CRYSTAL DIAMOND LAYERS - ANALYSIS OF THE JUNCTIONS BETWEEN ADJACENT DIAMONDS, DIAMOND AND RELATED MATERIALS, 7(7), 1998, pp. 986-998
Authors:
DELCLOS S
DORIGNAC D
PHILLIPP F
SILVA F
GICQUEL A
Citation: S. Delclos et al., ULTRA-HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DEFECTS IN THE CVD DIAMOND STRUCTURE, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 222-227
Authors:
HASSOUNI K
LEROY O
FARHAT S
GICQUEL A
Citation: K. Hassouni et al., MODELING OF H-2 AND H-2 CH4 MODERATE-PRESSURE MICROWAVE PLASMA USED FOR DIAMOND DEPOSITION/, Plasma chemistry and plasma processing, 18(3), 1998, pp. 325-362
Authors:
GICQUEL A
CHENEVIER M
HASSOUNI K
TSEREPI A
DUBUS M
Citation: A. Gicquel et al., VALIDATION OF ACTINOMETRY FOR ESTIMATING RELATIVE HYDROGEN-ATOM DENSITIES AND ELECTRON-ENERGY EVOLUTION IN PLASMA-ASSISTED DIAMOND DEPOSITION REACTORS, Journal of applied physics, 83(12), 1998, pp. 7504-7521
Authors:
HASSOUNI K
GICQUEL A
CAPITELLI M
Citation: K. Hassouni et al., THE ROLE OF DISSOCIATIVE ATTACHMENT FROM RYDBERG STATES IN ENHANCING H- CONCENTRATION IN MODERATE-PRESSURE AND LOW-PRESSURE H-2 PLASMA SOURCES, Chemical physics letters, 290(4-6), 1998, pp. 502-508
Authors:
HASSOUNI K
SCOTT CD
FARHAT S
GICQUEL A
CAPITELLI M
Citation: K. Hassouni et al., NON-MAXWELLIAN EFFECT ON SPECIES AND ENERGY-TRANSPORT IN MODERATE PRESSURE H-2 PLASMAS, Surface & coatings technology, 97(1-3), 1997, pp. 391-403
Authors:
FINDELINGDUFOUR C
GICQUEL A
Citation: C. Findelingdufour et A. Gicquel, STUDY FOR FABRICATING LARGE-AREA DIAMOND SINGLE-CRYSTAL LAYERS, Thin solid films, 308, 1997, pp. 178-185
Authors:
GICQUEL A
CHENEVIER M
BRETON Y
PETIAU M
BOOTH JP
HASSOUNI K
Citation: A. Gicquel et al., GROUND-STATE AND EXCITED-STATE H-ATOM TEMPERATURES IN A MICROWAVE PLASMA DIAMOND DEPOSITION REACTOR, Journal de physique. III, 6(9), 1996, pp. 1167-1180
Authors:
HASSOUNI K
FARHAT S
SCOTT CD
GICQUEL A
Citation: K. Hassouni et al., MODELING SPECIES AND ENERGY-TRANSPORT IN MODERATE PRESSURE DIAMOND DEPOSITION H-2 PLASMAS, Journal de physique. III, 6(9), 1996, pp. 1229-1243
Authors:
CAPITELLI M
COLONNA G
GICQUEL A
GORSE C
HASSOUNI K
LONGO S
Citation: M. Capitelli et al., MAXWELL AND NON-MAXWELL BEHAVIOR OF ELECTRON-ENERGY DISTRIBUTION FUNCTION UNDER EXPANDING PLASMA-JET CONDITIONS - THE ROLE OF ELECTRON-ELECTRON, ELECTRON-ION, AND SUPERELASTIC ELECTRONIC COLLISIONS UNDER STATIONARY AND TIME-DEPENDENT CONDITIONS, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 54(2), 1996, pp. 1843-1849
Authors:
FOULON F
BERGONZO P
JANY C
GICQUEL A
POCHET T
Citation: F. Foulon et al., CVD DIAMOND PHOTOCONDUCTORS FOR PICOSECOND RADIATION PULSE CHARACTERIZATION, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 732-736
Authors:
JANY C
FOULON F
BERGONZO P
BRAMBILLA A
SILVA F
GICQUEL A
POCHET T
Citation: C. Jany et al., INFLUENCE OF THE CRYSTALLINE-STRUCTURE ON THE ELECTRICAL-PROPERTIES OF CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 741-746
Authors:
ILIAS S
SENE G
MOLLER P
STAMBOULI V
PASCALLON J
BOUCHIER D
GICQUEL A
TARDIEU A
ANGER E
RAVET MF
Citation: S. Ilias et al., PLANARIZATION OF DIAMOND THIN-FILM SURFACES BY ION-BEAM ETCHING AT GRAZING-INCIDENCE ANGLE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 835-839
Authors:
VIVENSANG C
FERLAZZOMANIN L
RAVET MF
TURBAN G
ROUSSEAUX F
GICQUEL A
Citation: C. Vivensang et al., SURFACE SMOOTHING OF DIAMOND MEMBRANES BY REACTIVE ION ETCHING PROCESS, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 840-844
Authors:
SILVA F
GICQUEL A
TARDIEU A
CLEDAT P
CHAUVEAU T
Citation: F. Silva et al., CONTROL OF AN MPACVD REACTOR FOR POLYCRYSTALLINE TEXTURED DIAMOND FILMS SYNTHESIS - ROLE OF MICROWAVE-POWER DENSITY, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 338-344
Authors:
GICQUEL A
HASSOUNI K
BRETON Y
CHENEVIER M
CUBERTAFON JC
Citation: A. Gicquel et al., GAS TEMPERATURE-MEASUREMENTS BY LASER SPECTROSCOPIC TECHNIQUES AND BYOPTICAL-EMISSION SPECTROSCOPY, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 366-372
Authors:
CELLA N
ELRHALEB H
ROGER JP
FOURNIER D
ANGER E
GICQUEL A
Citation: N. Cella et al., EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF MICRON THICK CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 5(12), 1996, pp. 1424-1432
Authors:
CAPITELLI M
COLONNA G
HASSOUNI K
GICQUEL A
Citation: M. Capitelli et al., ELECTRON-ENERGY DISTRIBUTION-FUNCTIONS AND RATE AND TRANSPORT-COEFFICIENTS OF H-2 H/CH4 REACTIVE PLASMAS FOR DIAMOND FILM DEPOSITION/, Plasma chemistry and plasma processing, 16(2), 1996, pp. 153-171
Authors:
FOULON F
BERGONZO P
JANY C
GICQUEL A
POCHET T
Citation: F. Foulon et al., CVD DIAMOND DETECTORS FOR RADIATION PULSE CHARACTERIZATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 42-45
Authors:
JANY C
FOULON F
BERGONZO P
BRAMBILLA A
GICQUEL A
POCHET T
Citation: C. Jany et al., INFLUENCE OF CVD DIAMOND FILM TEXTURES ON THE ELECTRICAL RESPONSE OF RADIATION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 107-111
Authors:
CHARDONNET C
BERNARD V
DAUSSY C
GICQUEL A
ANGER E
Citation: C. Chardonnet et al., POLARIZATION PROPERTIES OF THIN-FILMS OF DIAMOND, Applied optics, 35(34), 1996, pp. 6692-6697
Authors:
RICARD A
STONGE L
MALVOS H
GICQUEL A
HUBERT J
MOISAN M
Citation: A. Ricard et al., MICROWAVE-EXCITED PLASMA TORCH - 2 COMPLE MENTARY CONFIGURATIONS, Journal de physique. III, 5(8), 1995, pp. 1269-1285
Authors:
ANGER E
GICQUEL A
WANG ZZ
RAVET MF
Citation: E. Anger et al., CHEMICAL AND MORPHOLOGICAL MODIFICATIONS OF SILICON-WAFERS TREATED BYULTRASONIC IMPACTS OF POWDERS - CONSEQUENCES ON DIAMOND NUCLEATION, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 759-764
Authors:
FINDELINGDUFOUR C
VIGNES A
GICQUEL A
Citation: C. Findelingdufour et al., MWPACVD DIAMOND HOMOEPITAXIAL GROWTH - ROLE OF THE PLASMA AND THE SUBSTRATE PARAMETERS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 429-434