Authors: GIRAULT P BLANCHARD C GROSBRAS P BARBOT JF

Citation: P. Girault et al., RELAXATION-TIME FOR IONIZED IMPURITY SCATTERING IN COMPENSATED N-TYPEHG1-XCDXTE NEAR X=0.2, Journal of Materials Science, 32(14), 1997, pp. 3857-3861

Authors: RENAULT PO BARBOT JF GIRAULT P DECLEMY A RIVAUD G BLANCHARD C

Citation: Po. Renault et al., PROPERTIES OF DISLOCATIONS IN HGCDTE CRYSTALS, Journal de physique. III, 5(9), 1995, pp. 1383-1389

Authors: GIRAULT P BARBOT JF BLANCHARD C

Citation: P. Girault et al., ELECTRICAL PROPERTY OF N-HG0.8CD0.2TE PLASTICALLY DEFORMED, Journal of materials science letters, 14(6), 1995, pp. 449-451

Authors: BARBOT JF GIRAULT P BLANCHARD C HUMMELGEN IA

Citation: Jf. Barbot et al., OBSERVATION OF DEEP LEVELS ASSOCIATED WITH DISLOCATIONS IN N-TYPE HG0.3CD0.7TE, Journal of Materials Science, 30(13), 1995, pp. 3471-3474

Authors: BLANCHARD C GIRAULT P

Citation: C. Blanchard et P. Girault, ENERGY-STATES OF THE CATION VACANCY IN II-VI-COMPOUNDS, Semiconductor science and technology, 6(9A), 1991, pp. 127-130