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Results:
1-7
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Results: 7
Authors:
GIRI PK
DHAR S
KULKARNI VN
MOHAPATRA YN
Citation: Pk. Giri et al., CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON, Physical review. B, Condensed matter, 57(23), 1998, pp. 14603-14606
Authors:
GIRI PK
MOHAPATRA YN
Citation: Pk. Giri et Yn. Mohapatra, ELECTRICAL CHARACTERIZATION OF MEV HEAVY-ION-INDUCED DAMAGE IN SILICON - EVIDENCE FOR DEFECT MIGRATION AND CLUSTERING, Journal of applied physics, 84(4), 1998, pp. 1901-1912
Authors:
GIRI PK
DHAR S
KULKARNI VN
MOHAPATRA YN
Citation: Pk. Giri et al., CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SI IRRADIATED WITH MEV AR+ IONS USING CONSTANT CAPACITANCE TIME ANALYZED TRANSIENT SPECTROSCOPY, Bulletin of Materials Science, 20(4), 1997, pp. 417-421
Authors:
GIRI PK
DHAR S
KULKARNI VN
MOHAPATRA YN
Citation: Pk. Giri et al., ELECTRICALLY ACTIVE DEFECTS IN AS-IMPLANTED, DEEP BURIED LAYERS IN P-TYPE SILICON, Journal of applied physics, 81(1), 1997, pp. 260-263
Authors:
GIRI PK
MOHAPATRA YN
Citation: Pk. Giri et Yn. Mohapatra, COMPENSATING DEFECT IN DEEP BURIED LAYERS PRODUCED BY MEV HEAVY-IONS IN N-SILICON, Applied physics letters, 71(12), 1997, pp. 1682-1684
Authors:
GIRI PK
DHAR S
KULKARNI VN
MOHAPATRA YN
Citation: Pk. Giri et al., ELECTRICALLY ACTIVE DEFECTS DUE TO END-OF-ION-RANGE DAMAGE IN SILICONIRRADIATED WITH MEV AR+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 285-289
Authors:
GIRI PK
MOHAPATRA YN
Citation: Pk. Giri et Yn. Mohapatra, NONEXPONENTIALITY IN PHOTOINDUCED CURRENT TRANSIENTS IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE, Journal of applied physics, 78(1), 1995, pp. 262-268
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